switching MSKSEMI BTA12-800B MS triac featuring parallel resistor gate cathode for electronic control

Key Attributes
Model Number: BTA12-800B(MS)
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
120A
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTA12-800B(MS)
Package:
TO-220
Product Description

BTA12-XXXB(MS) Series Triacs

Product Overview
The BTA12-XXXB(MS) series triacs, featuring a parallel resistor between the Gate and Cathode, are specifically recommended for applications such as straight hair dryers, igniters, and anion generators. These devices offer reliable performance in demanding applications, providing consistent triggering and switching capabilities.

Product Attributes

  • Brand: MSKSEMI
  • Series: BTA12-XXXB(MS)

Technical Specifications

Parameter Symbol Model Value Unit Notes
Repetitive peak off-state voltage VDRM BTA12-600B(MS) 600 V (Tj=25)
Repetitive peak off-state voltage VDRM BTA12-800B(MS) 800 V (Tj=25)
Repetitive peak reverse voltage VRRM BTA12-600B(MS) 600 V (Tj=25)
Repetitive peak reverse voltage VRRM BTA12-800B(MS) 800 V (Tj=25)
RMS on-state current IT(RMS) BTA12-XXXB(MS) 12 A (TC=85)
Non repetitive surge peak on-state current ITSM BTA12-XXXB(MS) 120 A (full cycle, F=50Hz)
I2t value for fusing I2t BTA12-XXXB(MS) 78 A2s (tp=10ms)
Critical rate of rise of on-state current dI/dt BTA12-XXXB(MS) 50 A/s (IG =2IGT)
Peak gate current IGM BTA12-XXXB(MS) 4 A
Average gate power dissipation PG(AV) BTA12-XXXB(MS) 1 W
Peak gate power PGM BTA12-XXXB(MS) 5 W
Storage junction temperature range Tstg BTA12-XXXB(MS) -40 to 150
Operating junction temperature range Tj BTA12-XXXB(MS) -40 to 125
Gate Trigger Current (IGT) IGT BTA12-XXXB(MS) MAX 50 mA VD=12V, RL=33, Quadrant --
Gate Trigger Voltage (VGT) VGT BTA12-XXXB(MS) MAX 1.3 V Quadrant --
Gate Trigger Voltage (VGD) VGD BTA12-XXXB(MS) MIN 0.2 V VD=VDRM, Tj=125, RL=3.3K, Quadrant --
Latching Current (IL) IL BTA12-XXXB(MS) MAX 80 mA IG=1.2IGT, Quadrant -
Holding Current (IH) IH BTA12-XXXB(MS) MAX 60 mA IT=100mA, Quadrant
Repetitive peak off-state voltage VDRM /VRRM BTA12-XXXB(MS) 600/800 V
On-state voltage (VTM) VTM BTA12-XXXB(MS) 1.5 V ITM=17A, tp=380s, Tj=25
Off-state current (IDRM) IDRM BTA12-XXXB(MS) 5 A VD=VDRM, Tj=25
Reverse leakage current (IRRM) IRRM BTA12-XXXB(MS) 1 mA VR=VRRM, Tj=125
Junction to case thermal resistance Rth(j-c) BTA12-XXXB(MS) 2.3 /W (AC)
Package Type PKG BTA12-XXXB(MS) TO-220 50/One tube, 1000/a box of REEL

Package Dimensions (TO-220)

Dimension Millimeters (Min) Millimeters (Typ) Millimeters (Max) Inches (Min) Inches (Typ) Inches (Max)
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
b1 0.61 0.88 0.024 0.034
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.80 16.80 0.622 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102

2404151058_MSKSEMI-BTA12-800B-MS_C22365373.pdf
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