Nexperia PIMD3 115 Resistor Equipped Transistors in SOT457 Package with Integrated 10k Bias Resistors
Key Attributes
Model Number:
PIMD3,115
Product Custom Attributes
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PIMD3,115
Package:
SOT-457
Product Description
PIMD3 NPN/PNP Resistor-Equipped Transistors
Product Overview
The Nexperia PIMD3 is a series of NPN/PNP resistor-equipped transistors (RET) integrated into a compact SOT457 (SC-74) surface-mounted device (SMD) plastic package. These transistors feature built-in bias resistors (R1 = 10 k, R2 = 10 k), simplifying circuit design, reducing component count, and lowering pick-and-place costs. With a 100 mA output current capability, they are suitable for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications. The PIMD3 series is AEC-Q101 qualified, making it suitable for automotive applications.
Product Attributes
- Brand: Nexperia
- Product Type: NPN/PNP Resistor-Equipped Transistors (RET)
- Package Type: SOT457 (SC-74)
- Built-in Resistors: R1 = 10 k, R2 = 10 k
- Qualification: AEC-Q101
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Per transistor, for the PNP transistor with negative polarity | ||||||
| VCEO | Collector-emitter voltage | Open base | - | - | 50 | V |
| IO | Output current | - | - | - | 100 | mA |
| R1 | Bias resistor 1 (input) | - | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1 | 1.2 | - |
| VCBO | Collector-base voltage | Open emitter | - | - | 50 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 10 | V |
| VI | Input voltage TR1 | - | -10 | - | -10 | V |
| VI | Input voltage TR2 | - | -40 | - | -40 | V |
| IO | Output current | - | - | - | 100 | mA |
| Ptot | Total power dissipation | Tamb 25 C [1] | - | - | 250 | mW |
| Ptot | Total power dissipation per device | Tamb 25 C [1] | - | - | 400 | mW |
| Tj | Junction temperature | - | - | - | 150 | C |
| Tamb | Ambient temperature | - | -65 | - | 150 | C |
| Tstg | Storage temperature | - | -65 | - | 150 | C |
| Thermal characteristics | ||||||
| Rth(j-a) | Thermal resistance from junction to ambient in free air [1] | Per transistor | - | - | 500 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air [1] | Per device | - | - | 313 | K/W |
| Characteristics | ||||||
| V(BR)CBO | Collector-base breakdown voltage | IC = 100 A; IE = 0 A; Tamb = 25 C | 50 | - | - | V |
| V(BR)CEO | Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A; Tamb = 25 C | 50 | - | - | V |
| ICBO | Collector-base cut-off current | VCB = 50 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tamb = 25 C | - | - | 1 | A |
| ICEO | Collector-emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| IEBO | Emitter-base cut-off current | VEB = 5 V; IC = 0 mA; Tamb = 25 C | - | - | 400 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA; Tamb = 25 C | 30 | - | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA; Tamb = 25 C | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A; Tamb = 25 C | - | 0.8 | 1.1 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 10 mA; Tamb = 25 C | 1.8 | 2.5 | - | V |
| R1 | Bias resistor 1 (input) | - | 7 | 10 | 13 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1 | 1.2 | - |
| TR1 (NPN) | ||||||
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 2.5 | pF |
| fT | Transition frequency | VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [1] | - | 230 | - | MHz |
| TR2 (PNP) | ||||||
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | - | 3 | pF |
| fT | Transition frequency | VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [1] | - | 180 | - | MHz |
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.
2410121944_Nexperia-PIMD3-115_C478182.pdf
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