Integrated Bias Resistor Network Digital Transistor onsemi DTC124XET1G Ideal for Compact and Circuits
Digital Transistors (BRT) with Monolithic Bias Resistor Network
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. These devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant.
- Simplifies Circuit Design
- Reduces Board Space
- Reduces Component Count
- S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ101 Qualified and PPAP Capable
Technical Specifications
| Device Part | Marking | Package | Collector-Base Voltage (VCBO) | Collector-Emitter Voltage (VCEO) | Collector Current (IC) | Input Forward Voltage (VIN(fwd)) | Input Reverse Voltage (VIN(rev)) | R1 | R2 | Total Device Dissipation (PD) @ 25C (mW) | Thermal Resistance Junction to Ambient (RJA) (C/W) | Collector-Base Cutoff Current (ICBO) | Collector-Emitter Cutoff Current (ICEO) | Emitter-Base Cutoff Current (IEBO) | Collector-Base Breakdown Voltage (V(BR)CBO) | Collector-Emitter Breakdown Voltage (V(BR)CEO) | DC Current Gain (hFE) | Collector-Emitter Saturation Voltage (VCE(sat)) | Input Voltage (off) (Vi(off)) | Input Voltage (on) (Vi(on)) | Output Voltage (on) (VOL) | Output Voltage (off) (VOH) |
| MUN2234T1G | 8L | SC-59 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 8 Vdc | 22 k | 47 k | 230 (Note 1) / 338 (Note 2) | 540 (Note 1) / 370 (Note 2) | 100 nAdc | 500 nAdc | 0.13 mAdc | 50 Vdc | 50 Vdc | 80 - 150 | 0.25 Vdc | 0.5 Vdc | 2.0 Vdc | 0.2 Vdc | 4.9 Vdc |
| MMUN2234LT1G, SMMUN2234LT1G* | A8L | SOT-23 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 8 Vdc | 22 k | 47 k | 246 (Note 1) / 400 (Note 2) | 508 (Note 1) / 311 (Note 2) | 100 nAdc | 500 nAdc | 0.13 mAdc | 50 Vdc | 50 Vdc | 80 - 150 | 0.25 Vdc | 0.5 Vdc | 2.0 Vdc | 0.2 Vdc | 4.9 Vdc |
| MUN5234T1G, NSVMUN5234T1G* | 8L | SC-70/SOT-323 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 8 Vdc | 22 k | 47 k | 202 (Note 1) / 310 (Note 2) | 618 (Note 1) / 403 (Note 2) | 100 nAdc | 500 nAdc | 0.13 mAdc | 50 Vdc | 50 Vdc | 80 - 150 | 0.25 Vdc | 0.5 Vdc | 2.0 Vdc | 0.2 Vdc | 4.9 Vdc |
| DTC124XET1G | 8L | SC-75 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 8 Vdc | 22 k | 47 k | 200 (Note 1) / 300 (Note 2) | 600 (Note 1) / 400 (Note 2) | 100 nAdc | 500 nAdc | 0.13 mAdc | 50 Vdc | 50 Vdc | 80 - 150 | 0.25 Vdc | 0.5 Vdc | 2.0 Vdc | 0.2 Vdc | 4.9 Vdc |
| DTC124XM3T5G | 8L | SOT-723 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 8 Vdc | 22 k | 47 k | 260 (Note 1) / 600 (Note 2) | 480 (Note 1) / 205 (Note 2) | 100 nAdc | 500 nAdc | 0.13 mAdc | 50 Vdc | 50 Vdc | 80 - 150 | 0.25 Vdc | 0.5 Vdc | 2.0 Vdc | 0.2 Vdc | 4.9 Vdc |
| NSBC124XF3T5G | J (180) | SOT-1123 | 50 Vdc | 50 Vdc | 100 mAdc | 40 Vdc | 8 Vdc | 22 k | 47 k | 254 (Note 3) / 297 (Note 4) | 493 (Note 3) / 421 (Note 4) | 100 nAdc | 500 nAdc | 0.13 mAdc | 50 Vdc | 50 Vdc | 80 - 150 | 0.25 Vdc | 0.5 Vdc | 2.0 Vdc | 0.2 Vdc | 4.9 Vdc |
Notes:
1. FR-4 @ Minimum Pad.
2. FR-4 @ 1.0 x 1.0 Inch Pad.
3. FR-4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR-4 @ 500 mm2, 1 oz. copper traces, still air.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
2411271936_onsemi-DTC124XET1G_C890588.pdf
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