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quality Resistor equipped double transistor Nexperia PUMD10 115 in compact SOT363 package for circuit design factory
quality Resistor equipped double transistor Nexperia PUMD10 115 in compact SOT363 package for circuit design factory

Resistor equipped double transistor Nexperia PUMD10 115 in compact SOT363 package for circuit design

Key Attributes
Model Number: PUMD10,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
5V
Input Resistor:
2.2kΩ
Resistor Ratio:
21
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD10,115
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia PUMD10 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a compact SOT363 (SC-88) SMD plastic package. This device simplifies circuit design and reduces component count with its built-in bias resistors, enabling a 100 mA output current capability. It is ideal for low-current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications.

Product Attributes

  • Brand: Nexperia
  • Package Type: TSSOP6 (SOT363)
  • Qualification: Non-automotive

Technical Specifications

Parameter Conditions Min Typ Max Unit
General
Collector-emitter voltage (VCEO) Open base (per transistor) - - 50 V
Output current (IO) Per transistor - - 100 mA
Bias resistor R1 (input) [1] 1.54 2.2 2.86 k
Bias resistor ratio R2/R1 [1] 17 21 26 -
Limiting values
Collector-base voltage (VCBO) Open emitter (per transistor) - - 50 V
Collector-emitter voltage (VCEO) Open base (per transistor) - - 50 V
Emitter-base voltage (VEBO) Open collector (per transistor) - - 5 V
Input voltage (VI) Positive (TR1) - - 12 V
Input voltage (VI) Negative (TR1) - - -5 V
Input voltage (VI) Positive (TR2) - - 5 V
Input voltage (VI) Negative (TR2) - - -12 V
Total power dissipation (Ptot) Tamb 25 C (per device) [1] - - 300 mW
Junction temperature (Tj) - - - 150 C
Storage temperature (Tstg) - -65 - 150 C
Characteristics
Collector-base breakdown voltage (V(BR)CBO) IC = 100 A; IE = 0 A (per transistor) 50 - - V
Collector-emitter breakdown voltage (V(BR)CEO) IC = 2 mA; IB = 0 A (per transistor) 50 - - V
Collector-base cut-off current (ICBO) VCB = 50 V; IE = 0 A (per transistor) - - 100 nA
Collector-emitter cut-off current (ICEO) VCE = 30 V; IB = 0 A (per transistor) - - 100 nA
Collector-emitter cut-off current (ICEO) VCE = 30 V; IB = 0 A; Tj = 150 C (per transistor) - - 5 A
Emitter-base cut-off current (IEBO) VEB = 5 V; IC = 0 A (per transistor) - - 180 A
DC current gain (hFE) VCE = 5 V; IC = 10 mA (per transistor) 100 - - -
Collector-emitter saturation voltage (VCEsat) IC = 5 mA; IB = 0.25 mA (per transistor) - - 100 mV
Off-state input voltage (VI(off)) VCE = 5 V; IC = 100 A (per transistor) - 0.6 0.5 V
On-state input voltage (VI(on)) VCE = 0.3 V; IC = 5 mA (per transistor) 1.1 0.75 - V
Collector capacitance (Cc) VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz (TR1) - - 2.5 pF
Transition frequency (fT) VCE = 5 V; IC = 10 mA; f = 100 MHz (TR1) [2] - 230 - MHz
Collector capacitance (Cc) VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz (TR2) - - 3 pF
Transition frequency (fT) VCE = 5 V; IC = 10 mA; f = 100 MHz (TR2) [2] - 180 - MHz
Package Dimensions
Body dimensions - 2.1 - 1.25 mm
Body height - - - 0.95 mm
Pitch - - - 0.65 mm

[1] See section "Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor.


2410121943_Nexperia-PUMD10-115_C454998.pdf

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