Surface Mount NPN NPN Resistor Equipped Transistors Nexperia PEMH11 115 for Automotive Applications
Key Attributes
Model Number:
PEMH11,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PEMH11,115
Package:
SOT-666
Product Description
Nexperia PEMH11; PUMH11 NPN/NPN Resistor-Equipped Transistors
The Nexperia PEMH11 and PUMH11 are NPN/NPN Resistor-Equipped Transistors (RET) designed for surface-mounted applications. These devices integrate built-in bias resistors, simplifying circuit design and reducing component count. They are suitable for low current peripheral driving, controlling IC inputs, and replacing general-purpose transistors in digital applications. The transistors are AEC-Q101 qualified, making them suitable for automotive applications.
Product Attributes
- Brand: Nexperia
- Type: NPN/NPN Resistor-Equipped Transistors (RET)
- Certifications: AEC-Q101 Qualified
- Bias Resistor R1: 10 kΩ (Typical)
- Bias Resistor R2/R1 Ratio: 1 (Typical)
Technical Specifications
| Model | Package | NPN/PNP Complement | Package Configuration | Collector-Emitter Voltage (VCEO) | Output Current (IO) | Bias Resistor R1 (R1) | Bias Resistor Ratio (R2/R1) |
|---|---|---|---|---|---|---|---|
| PEMH11 | SOT666 | NPN/PNP | ultra small and flat lead | 50 V | 100 mA | 7 - 13 kΩ | 0.8 - 1.2 |
| PUMH11 | SOT363 (SC-88) | PNP/PNP | very small | 50 V | 100 mA | 7 - 13 kΩ | 0.8 - 1.2 |
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage (VCBO) | Open emitter | - | - | 50 | V |
| Collector-Emitter Voltage (VCEO) | Open base | - | - | 50 | V |
| Emitter-Base Voltage (VEBO) | Open collector | - | - | 10 | V |
| Input Voltage (VI) | Positive | - | - | 40 | V |
| Input Voltage (VI) | Negative | -10 | - | - | V |
| Output Current (IO) | - | - | - | 100 | mA |
| Peak Collector Current (ICM) | - | - | - | 100 | mA |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C (PEMH11 SOT666) | - | - | 200 | mW |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C (PUMH11 SOT363) | - | - | 200 | mW |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C (Per device PEMH11 SOT666) | - | - | 300 | mW |
| Total Power Dissipation (Ptot) | Tamb ≤ 25 °C (Per device PUMH11 SOT363) | - | - | 300 | mW |
| Junction Temperature (Tj) | - | - | - | 150 | °C |
| Ambient Temperature (Tamb) | - | -65 | - | 150 | °C |
| Storage Temperature (Tstg) | - | -65 | - | 150 | °C |
| DC Current Gain (hFE) | VCE = 5 V; IC = 5 mA | 30 | - | - | - |
| Collector-Emitter Saturation Voltage (VCEsat) | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| Off-state Input Voltage (VI(off)) | VCE = 5 V; IC = 100 µA | - | 0.8 | 1.1 | V |
| On-state Input Voltage (VI(on)) | VCE = 0.3 V; IC = 10 mA | 1.8 | 2.5 | - | V |
| Collector Capacitance (Cc) | VCB = 10 V; IE = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| Transition Frequency (fT) | VCB = 5 V; IC = 10 mA; f = 100 MHz | 230 | - | - | MHz |
2411121111_Nexperia-PEMH11-115_C426857.pdf
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