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quality Nexperia PBSS4160T 215 NPN Transistor Low Collector Emitter Saturation Voltage 60 Volt 1 Amp SOT23 factory
quality Nexperia PBSS4160T 215 NPN Transistor Low Collector Emitter Saturation Voltage 60 Volt 1 Amp SOT23 factory

Nexperia PBSS4160T 215 NPN Transistor Low Collector Emitter Saturation Voltage 60 Volt 1 Amp SOT23

Key Attributes
Model Number: PBSS4160T,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.25W
Transition Frequency(fT):
220MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS4160T,215
Package:
SOT-23
Product Description

Nexperia PBSS4160T: 60 V, 1 A NPN Low VCEsat (BISS) Transistor

Product Overview
The Nexperia PBSS4160T is a high-performance NPN low VCEsat (BISS) transistor designed for demanding applications. Encased in a compact SOT23 plastic package, this transistor offers a low collector-emitter saturation voltage (VCEsat), high collector current capability (IC and ICM), and high efficiency, leading to reduced heat generation and smaller printed-circuit board footprints. Its robust design makes it suitable for power management tasks such as DC-to-DC conversion and supply line switching, as well as peripheral and inductive load driving in automotive, telecom infrastructure, and industrial segments.

Product Attributes

  • Brand: Nexperia
  • Transistor Type: NPN
  • Package Type: SOT23
  • Complementary PNP Transistor: PBSS5160T

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 60 V
IC Collector current [1] - - 1 A
ICM Peak collector current or limited by Tj(max); tp = 1 ms - - 2 A
RCEsat Collector-emitter saturation resistance IC = 1 A; IB = 100 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 200 250 m
VCBO Collector-base voltage Open emitter - - 80 V
VEBO Emitter-base voltage Open collector - - 5 V
IB Base current - - 300 mA
IBM Peak base current tp 300 s; 0.02 - - 1 A
Ptot Total power dissipation Tamb 25 C [1][3] - - 1.25 W
Tj Junction temperature - - 150 C
Tamb Ambient temperature -65 - 150 C
Tstg Storage temperature -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient in free air [1] - - 465 K/W
Rth(j-a) Thermal resistance junction to ambient [2] - - 312 K/W
ICBO Collector-base cut-off current VCB = 60 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICES Collector-emitter cut-off current VCE = 60 V; VBE = 0 V; Tamb = 25 C - - 100 nA
hFE DC current gain VCE = 5 V; IC = 1 mA; Tamb = 25 C 250 400 - -
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 50 mA; Tamb = 25 C - 110 140 mV
VBEsat Base-emitter saturation voltage IC = 1 A; IB = 50 mA; Tamb = 25 C - 0.95 1.1 V
fT Transition frequency VCE = 10 V; IC = 50 mA; f = 100 MHz; Tamb = 25 C 150 220 - MHz
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 5.5 10 pF

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Pulsed; tp 10 ms; 0.02.

Applications

  • Automotive 42 V power
  • Telecom infrastructure
  • Industrial
  • Power management (DC-to-DC conversion, Supply line switching)
  • Peripheral driver
  • Driver in low supply voltage applications (e.g., lamps and LEDs)
  • Inductive load driver (e.g., relays, buzzers and motors)

2410010131_Nexperia-PBSS4160T-215_C426841.pdf
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