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quality Nexperia PUMD3 125 Double Transistor RET Featuring NPN PNP Configuration and 100 Milliamp Output Current factory
quality Nexperia PUMD3 125 Double Transistor RET Featuring NPN PNP Configuration and 100 Milliamp Output Current factory

Nexperia PUMD3 125 Double Transistor RET Featuring NPN PNP Configuration and 100 Milliamp Output Current

Key Attributes
Model Number: PUMD3,125
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
10kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD3,125
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia PUMD3 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a compact SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and incorporates built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This device is ideal for digital applications in automotive and industrial segments, serving as a cost-effective alternative for BC847/BC857 series in digital applications, controlling IC inputs, and switching loads.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT363 (SC-88)
  • Configuration: NPN/PNP Resistor-Equipped Double Transistor (RET)
  • Bias Resistors: R1 = 10 k, R2 = 10 k

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor, for the PNP transistor with negative polarity
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
Per transistor, for the PNP transistor with negative polarity
VCBO Collector-base voltage Open emitter - - 50 V
VCEO Collector-emitter voltage Open base - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage TR1 - - - -10 V
VI Input voltage TR2 - - - -40 V
IO Output current - - - 100 mA
Ptot Total power dissipation Tamb 25 C [1] - - 200 mW
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Per transistor
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 625 K/W
Per device
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 417 K/W
Per transistor, for the PNP transistor with negative polarity
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 mA; Tamb = 25 C - - 400 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 1.1 0.8 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 10 mA; Tamb = 25 C 2.5 1.8 - V
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
TR1 (NPN)
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] - 230 - MHz
TR2 (PNP)
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 3 pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [2] - 180 - MHz

2409302134_Nexperia-PUMD3-125_C553517.pdf

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