Nexperia PEMD48 115 NPN PNP Double Resistor Equipped Transistors RET for Digital Circuit Integration
Key Attributes
Model Number:
PEMD48,115
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
2.2kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PEMD48,115
Package:
SOT-666-6
Product Description
Product Overview
The Nexperia PEMD48/PUMD48 series are NPN/PNP double Resistor-Equipped Transistors (RET) in small Surface-Mounted Device (SMD) plastic packages. These transistors are designed to reduce component count, simplify circuit design, and lower pick-and-place costs by incorporating built-in bias resistors. They offer a 100 mA output current capability and are AEC-Q101 qualified, making them suitable for low current peripheral driving, control of IC inputs, and as replacements for general-purpose transistors in digital applications.
Product Attributes
- Brand: Nexperia (formerly NXP Standard Product business)
- Certifications: AEC-Q101 qualified
- Technology: NPN/PNP double Resistor-Equipped Transistors (RET)
Technical Specifications
| Model | Package | Package Configuration | R1 Bias Resistor (k) | R2/R1 Bias Resistor Ratio | Output Current (mA) | Collector-Emitter Voltage (V) |
|---|---|---|---|---|---|---|
| PEMD48 | SOT666 | ultra small and flat lead | 33 - 61 (NPN TR1) 1.54 - 2.86 (PNP TR2) | 0.8 - 1.2 (NPN TR1) 17 - 26 (PNP TR2) | 100 | 50 |
| PUMD48 | SOT363 (SC-88) | very small | 33 - 61 (NPN TR1) 1.54 - 2.86 (PNP TR2) | 0.8 - 1.2 (NPN TR1) 17 - 26 (PNP TR2) | 100 | 50 |
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Per transistor; for the PNP transistor with negative polarity | |||||
| Collector-Base Voltage (VCBO) | open emitter | - | - | 50 | V |
| Collector-Emitter Voltage (VCEO) | open base | - | - | 50 | V |
| Emitter-Base Voltage (VEBO) | open collector (NPN TR1) | - | - | 10 | V |
| Emitter-Base Voltage (VEBO) | open collector (PNP TR2) | - | - | -5 | V |
| Input Voltage (VI) | TR1 positive | - | - | 40 | V |
| Input Voltage (VI) | TR1 negative | -10 | - | - | V |
| Input Voltage (VI) | TR2 positive | - | - | 5 | V |
| Input Voltage (VI) | TR2 negative | -12 | - | - | V |
| Output Current (IO) | - | - | - | 100 | mA |
| Peak Collector Current (ICM) | - | - | - | 100 | mA |
| Total Power Dissipation (Ptot) | |||||
| Ptot | Tamb 25C (PEMD48 SOT666) | - | - | 200 | mW |
| Ptot | Tamb 25C (PUMD48 SOT363) | - | - | 200 | mW |
| Per device Total Power Dissipation (Ptot) | |||||
| Ptot | Tamb 25C (PEMD48 SOT666) | - | - | 300 | mW |
| Ptot | Tamb 25C (PUMD48 SOT363) | - | - | 300 | mW |
| Junction Temperature (Tj) | - | - | - | 150 | C |
| Ambient Temperature (Tamb) | - | -65 | - | 150 | C |
| Storage Temperature (Tstg) | - | -65 | - | 150 | C |
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Characteristics (Tamb = 25 C unless otherwise specified) | ||||||
| Per transistor; for the PNP transistor with negative polarity | ||||||
| ICBO | Collector-Base cut-off current | VCB = 50 V; IE = 0 A | - | - | 100 | nA |
| ICEO | Collector-Emitter cut-off current | VCE = 30 V; IB = 0 A | - | - | 1 | A |
| ICEO | Collector-Emitter cut-off current | VCE = 30 V; IB = 0 A; Tj = 150 C | - | - | 5 | A |
| Transistor TR1 (NPN) | ||||||
| IEBO | Emitter-Base cut-off current | VEB = 5 V; IC = 0 A | - | - | 90 | A |
| hFE | DC current gain | VCE = 5 V; IC = 5 mA | 80 | - | - | |
| VCEsat | Collector-Emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 150 | mV |
| VI(off) | Off-state input voltage | VCE = 5 V; IC = 100 A | - | 1.2 | 0.8 | V |
| VI(on) | On-state input voltage | VCE = 0.3 V; IC = 2 mA | 3 | 1.6 | - | V |
| R1 | Bias resistor 1 (input) | - | 33 | 47 | 61 | k |
| R2/R1 | Bias resistor ratio | - | 0.8 | 1.0 | 1.2 | |
| Cc | Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| fT | Transition frequency | VCB = 5 V; IC = 10 mA; f = 100 MHz | - | 230 | - | MHz |
| Transistor TR2 (PNP) | ||||||
| IEBO | Emitter-Base cut-off current | VEB = -5 V; IC = 0 A | - | - | -180 | A |
| hFE | DC current gain | VCE = -5 V; IC = -10 mA | 100 | - | - | |
| VCEsat | Collector-Emitter saturation voltage | IC = -5 mA; IB = -0.25 mA | - | - | -100 | mV |
| VI(off) | Off-state input voltage | VCE = -5 V; IC = -100 A | - | -0.6 | -0.5 | V |
| VI(on) | On-state input voltage | VCE = -0.3 V; IC = -5 mA | -1.1 | -0.75 | - | V |
| R1 | Bias resistor 1 (input) | - | 1.54 | 2.20 | 2.86 | k |
| R2/R1 | Bias resistor ratio | - | 17 | 21 | 26 | |
| Cc | Collector capacitance | VCB = -10 V; IE = ie = 0 A; f = 1 MHz | - | - | 3 | pF |
| fT | Transition frequency | VCB = -5 V; IC = -10 mA; f = 100 MHz | - | 180 | - | MHz |
2411121112_Nexperia-PEMD48-115_C552417.pdf
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