NPN Resistor Equipped Transistor SOT323 Package with 500mA Output Current Nexperia PDTD114EUX AEC Q101
Key Attributes
Model Number:
PDTD114EUX
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
-
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTD114EUX
Package:
SOT-323-3
Product Description
Product Overview
The Nexperia PDTD1xxxU series comprises NPN Resistor-Equipped Transistors (RET) in a compact SOT323 (SC-70) surface-mounted device (SMD) plastic package. These transistors offer a 500 mA output current capability and a 50 V collector-emitter voltage. Featuring built-in bias resistors, they simplify circuit design, reduce component count, and provide a cost-saving alternative to discrete transistor/resistor combinations in digital applications. They are suitable for high-temperature applications up to 175 C and are AEC-Q101 qualified.
Product Attributes
- Brand: Nexperia
- Package Type: SOT323 (SC-70)
- Transistor Type: NPN Resistor-Equipped Transistor (RET)
- Qualification: AEC-Q101 qualified
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit | PDTD113EU | PDTD113ZU | PDTD123EU | PDTD123YU | PDTD143EU | PDTD143XU | PDTD114EU |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Collector-emitter voltage (VCEO) | open base | - | - | 50 | V | |||||||
| Output current (IO) | - | - | - | 500 | mA | |||||||
| Bias resistor R1 (input) | - | - | - | - | k | 1 | 1 | 2.2 | 2.2 | 4.7 | 4.7 | 10 |
| Bias resistor R2 (base-emitter) | - | - | - | - | k | 1 | 10 | 2.2 | 10 | 4.7 | 10 | 10 |
| Collector-base voltage (VCBO) | open emitter | - | - | 50 | V | |||||||
| Emitter-base voltage (VEBO) | open collector | - | - | - | V | 10 | 5 | 10 | 5 | 10 | 7 | 10 |
| Input voltage (VI) | - | - | - | - | V | -10 to +10 | -5 to +10 | -10 to +12 | -5 to +12 | -10 to +30 | -7 to +30 | -10 to +50 |
| Total power dissipation (Ptot) | Tamb 25 C [1] | - | - | 300 | mW | |||||||
| Total power dissipation (Ptot) | Tamb 25 C [2] | - | - | 425 | mW | |||||||
| Junction temperature (Tj) | - | - | - | 175 | C | |||||||
| Ambient temperature (Tamb) | - | -55 | - | +175 | C | |||||||
| Storage temperature (Tstg) | - | -55 | - | +175 | C | |||||||
| Thermal resistance (Rth(j-a)) | in free air [1] | - | - | 500 | K/W | |||||||
| Thermal resistance (Rth(j-a)) | in free air [2] | - | - | 353 | K/W | |||||||
| Collector-base cut-off current (ICBO) | VCB = 40 V; IE = 0 A | - | - | 100 | nA | |||||||
| Collector-base cut-off current (ICBO) | VCB = 50 V; IE = 0 A | - | - | 100 | nA | |||||||
| Collector-emitter cut-off current (ICEO) | VCE = 50 V; IB = 0 A | - | - | 0.5 | A | |||||||
| Emitter-base cut-off current (IEBO) | VEB = 5 V; IC = 0 A | - | - | - | mA | 4.0 | 0.8 | 2.0 | 0.65 | 0.9 | 0.6 | 0.4 |
| DC current gain (hFE) | VCE = 5 V; IC = 50 mA | - | - | - | - | 33 | 70 | 40 | 70 | 60 | 70 | 70 |
| Collector-emitter saturation voltage (VCEsat) | IC = 50 mA; IB = 2.5 mA | - | - | 100 | mV | |||||||
| Off-state input voltage (VI(off)) | VCE = 5 V; IC = 100 A | - | - | - | V | 0.6 to 1.5 | 0.3 to 1.0 | 0.6 to 1.8 | 0.4 to 1.0 | 0.6 to 1.5 | 0.5 to 1.1 | 0.6 to 1.5 |
| On-state input voltage (VI(on)) | VCE = 0.3 V; IC = 20 mA | - | - | - | V | 1.0 to 1.8 | 0.4 to 1.4 | 1.0 to 2.0 | 0.5 to 1.4 | 1.0 to 2.2 | 1.0 to 2.0 | 1.0 to 3.0 |
| Bias resistor R1 (input) | - | - | - | - | k | 0.7 to 1.3 | 0.7 to 1.3 | 1.54 to 2.86 | 1.54 to 2.86 | 3.3 to 6.1 | 3.3 to 6.1 | 7.0 to 13 |
| Bias resistor ratio R2/R1 | - | - | - | - | - | 0.9 to 1.1 | 9.0 to 11 | 0.9 to 1.1 | 4.1 to 5.0 | 0.9 to 1.1 | 1.91 to 2.34 | 0.9 to 1.1 |
| Collector capacitance (Cc) | VCB = 10 V; IE = 0 A; f = 1 MHz | - | - | 7 | pF | |||||||
| Transition frequency (fT) | VCE = 5 V; IC = 50 mA [1] | - | - | 225 | MHz |
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
2410121745_Nexperia-PDTD114EUX_C552247.pdf
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