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quality Nexperia PMBT4403 215 PNP switching transistor 40 volt 600 milliamp rated for automotive applications factory
quality Nexperia PMBT4403 215 PNP switching transistor 40 volt 600 milliamp rated for automotive applications factory

Nexperia PMBT4403 215 PNP switching transistor 40 volt 600 milliamp rated for automotive applications

Key Attributes
Model Number: PMBT4403,215
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
250mW
Transition Frequency(fT):
200MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PMBT4403,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PMBT4403 is a 40 V, 600 mA PNP switching transistor designed for general-purpose switching and linear amplification applications. It is AEC-Q101 qualified, making it suitable for automotive applications. This transistor is housed in a small SOT23 (TO-236AB) surface-mounted device (SMD) plastic package.

Product Attributes

  • Brand: Nexperia
  • Product Type: PNP switching transistor
  • Complementary NPN Transistor: PMBT4401
  • Qualification: AEC-Q101 qualified

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - -40 V
IC Collector current - - - -600 mA
hFE DC current gain VCE = -2 V; IC = -150 mA; Tamb = 25 C 100 - 300 -
VCBO Collector-base voltage open emitter - - -40 V
VEBO Emitter-base voltage open collector - - -5 V
ICM Peak collector current - - - -800 mA
IBM Peak base current single pulse; tp 1 ms - - -200 mA
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 500 K/W
ICBO Collector-base cut-off current VCB = -40 V; IE = 0 A; Tamb = 25 C - - -50 nA
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 C - - -50 nA
hFE DC current gain VCE = -1 V; IC = -0.1 mA; Tamb = 25 C 30 - - -
hFE DC current gain VCE = -1 V; IC = -1 mA; Tamb = 25 C 60 - - -
hFE DC current gain VCE = -1 V; IC = -10 mA; Tamb = 25 C 100 - - -
hFE DC current gain VCE = -2 V; IC = -150 mA; Tamb = 25 C 100 - 300 -
hFE DC current gain VCE = -2 V; IC = -500 mA; Tamb = 25 C 20 - - -
VCEsat Collector-emitter saturation voltage IC = -150 mA; IB = -15 mA; Tamb = 25 C - - -400 mV
VCEsat Collector-emitter saturation voltage IC = -500 mA; IB = -50 mA; Tamb = 25 C - - -750 mV
VBEsat Base-emitter saturation voltage IC = -150 mA; IB = -15 mA; Tamb = 25 C - - -950 mV
VBEsat Base-emitter saturation voltage IC = -500 mA; IB = -50 mA; Tamb = 25 C - - -1.3 V
td Delay time - - - 15 ns
tr Rise time - - - 30 ns
ton Turn-on time - - - 40 ns
ts Storage time - - - 300 ns
tf Fall time - - - 50 ns
toff Turn-off time IC = -150 mA; IBon = -15 mA; IBoff = 15 mA; Tamb = 25 C - - 350 ns
CC Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 8.5 pF
CE Emitter capacitance VEB = -500 mV; IC = 0 A; ic = 0 A; f = 1 MHz; Tamb = 25 C - - 35 pF
fT Transition frequency VCE = -10 V; IC = -20 mA; f = 100 MHz; Tamb = 25 C 200 - - MHz

[1] Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.


2410121948_Nexperia-PMBT4403-215_C75556.pdf

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