High voltage switching diode onsemi BAS20LT1G with PPAP capability and halogen free BFR free construction
Key Attributes
Model Number:
BAS20LT1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Leakage Current (Ir):
1uA@150V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
200V
Pd - Power Dissipation:
225mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAS20LT1G
Package:
SOT-23
Product Description
Product Overview
The BAS19L, BAS20L, BAS21L, and BAS21DW5 are high voltage switching diodes designed for various electronic applications. These devices are PbFree, Halogen Free/BFR Free, and RoHS Compliant. The S and NSV prefixes indicate suitability for automotive and other applications requiring unique site and control change requirements, with AECQ101 Qualification and PPAP Capability.
Product Attributes
- Brand: Semiconductor Components Industries, LLC (onsemi)
- Certifications: AECQ101 Qualified (S/NSV prefixes), PPAP Capable (S/NSV prefixes), RoHS Compliant, PbFree, Halogen Free/BFR Free
Technical Specifications
| Model | Continuous Reverse Voltage (Vdc) | Repetitive Peak Reverse Voltage (Vdc) | Continuous Forward Current (mAdc) | Peak Forward Surge Current (A) | Reverse Breakdown Voltage (Vdc) | Forward Voltage (Vdc) | Diode Capacitance (pF) | Reverse Recovery Time (ns) |
| BAS19L | 120 | 120 | 200 | 2 | 120 | 1.0 (IF=100mA), 1.25 (IF=200mA) | 5.0 | 50 |
| BAS20L | 200 | 200 | 200 | 2 | 200 | 1.0 (IF=100mA), 1.25 (IF=200mA) | 5.0 | 50 |
| BAS21L | 250 | 250 | 200 | 2 | 250 | 1.0 (IF=100mA), 1.25 (IF=200mA) | 5.0 | 50 |
| BAS21DW5 | 250 | 250 | 200 | 2 | 250 | 1.0 (IF=100mA), 1.25 (IF=200mA) | 5.0 | 50 |
2410010302_onsemi-BAS20LT1G_C232529.pdf
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