High power NPN bipolar transistor Nexperia PHPT60610NYX with LFPAK56 package and AEC Q101 qualification
Key Attributes
Model Number:
PHPT60610NYX
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
25W
Transition Frequency(fT):
140MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
10A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+175℃
Mfr. Part #:
PHPT60610NYX
Package:
LFPAK56(PowerSO-8)
Product Description
Product Overview
The Nexperia PHPT60610NY is a high-power NPN bipolar transistor designed for demanding applications. It features a high thermal power dissipation capability and can operate at temperatures up to 175 C. This transistor offers high energy efficiency due to reduced heat generation and is AEC-Q101 qualified, making it suitable for automotive applications. Its compact LFPAK56 (SOT669) package reduces Printed Circuit Board (PCB) requirements compared to DPAK transistors.
Product Attributes
- Brand: Nexperia
- Type: NPN Bipolar Transistor
- Package Type: LFPAK56 (SOT669)
- Qualification: AEC-Q101
- Complementary Part: PHPT60610PY (PNP)
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| VCEO | Collector-emitter voltage | Open base | - | - | 60 | V |
| IC | Collector current | - | - | - | 10 | A |
| ICM | Peak collector current | Single pulse; tp 1 ms | - | - | 20 | A |
| RCEsat | Collector-emitter saturation resistance | IC = 10 A; IB = 1 A; tp 300 s; pulsed; 0.02; Tamb = 25 C | - | 25 | 36 | m |
| VCBO | Collector-base voltage | Open emitter | - | - | 60 | V |
| VEBO | Emitter-base voltage | Open collector | - | - | 7 | V |
| IB | Base current | - | - | - | 1.5 | A |
| IBM | Peak base current | Single pulse; tp 1 ms | - | - | 2 | A |
| Ptot | Total power dissipation | Tamb 25 C (Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint) | - | - | 1.5 | W |
| Ptot | Total power dissipation | Tamb 25 C (Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm2) | - | - | 3.7 | W |
| Ptot | Total power dissipation | Tamb 25 C (Device mounted on a ceramic PCB; Al2O3, standard footprint) | - | - | 5 | W |
| Tj | Junction temperature | - | - | - | 175 | C |
| Tamb | Ambient temperature | - | -55 | - | 175 | C |
| Tstg | Storage temperature | - | -65 | - | 175 | C |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint | - | - | 100 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2 | - | - | 41 | K/W |
| Rth(j-a) | Thermal resistance from junction to ambient in free air | Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint | - | - | 30 | K/W |
| Rth(j-mb) | Thermal resistance from junction to mounting base | - | - | - | 6 | K/W |
| ICBO | Collector-base cut-off current | VCB = 48 V; IE = 0 A; Tamb = 25 C | - | - | 100 | nA |
| ICBO | Collector-base cut-off current | VCB = 48 V; IE = 0 A; Tj = 150 C | - | - | 50 | A |
| ICES | Collector-emitter cut-off current | VCE = 48 V; VBE = 0 V; Tamb = 25 C | - | - | 100 | nA |
| IEBO | Emitter-base cut-off current | VEB = 7 V; IC = 0 A; Tamb = 25 C | - | - | 100 | nA |
| hFE | DC current gain | VCE = 2 V; IC = 500 mA; Tamb = 25 C | 240 | 410 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 1 A; tp 300 s; 0.02; Tamb = 25 C | 210 | 400 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 5 A; tp 300 s; 0.02; Tamb = 25 C | 100 | 200 | - | - |
| hFE | DC current gain | VCE = 2 V; IC = 10 A; tp 300 s; 0.02; Tamb = 25 C; pulsed | 50 | 100 | - | - |
| VCEsat | Collector-emitter saturation voltage | IC = 1 A; IB = 50 mA; tp 300 s; 0.02; Tamb = 25 C; pulsed | - | 30 | 40 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 5 A; IB = 500 mA; tp 300 s; pulsed; 0.02; Tamb = 25 C | - | 115 | 160 | mV |
| VCEsat | Collector-emitter saturation voltage | IC = 10 A; IB = 1 A; tp 300 s; pulsed; 0.02; Tamb = 25 C | - | 250 | 360 | mV |
| RCEsat | Collector-emitter saturation resistance | IC = 10 A; IB = 1 A; tp 300 s; pulsed; 0.02; Tamb = 25 C | - | 25 | 36 | m |
| VBEsat | Base-emitter saturation voltage | IC = 1 A; IB = 50 mA; tp 300 s; pulsed; 0.02; Tamb = 25 C | - | - | 0.95 | V |
| VBEsat | Base-emitter saturation voltage | IC = 5 A; IB = 500 mA; tp 300 s; pulsed; 0.02; Tamb = 25 C | - | - | 1.2 | V |
| VBEsat | Base-emitter saturation voltage | IC = 10 A; IB = 1 A; tp 300 s; pulsed; 0.02; Tamb = 25 C | - | - | 1.4 | V |
| VBEon | Base-emitter turn-on voltage | VCE = 2 V; IC = 500 mA; Tamb = 25 C | - | - | 0.8 | V |
| td | Delay time | - | - | 20 | - | ns |
| tr | Rise time | - | - | 180 | - | ns |
| ton | Turn-on time | - | - | 200 | - | ns |
| ts | Storage time | - | - | 340 | - | ns |
| tf | Fall time | - | - | 165 | - | ns |
| toff | Turn-off time | VCC = 12.5 V; IC = 5 A; IBon = 250 mA; IBoff = -250 mA; Tamb = 25 C | - | 505 | - | ns |
| fT | Transition frequency | VCE = 10 V; IC = 500 mA; f = 100 MHz; Tamb = 25 C | - | 140 | - | MHz |
| Cc | Collector capacitance | VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C | - | 50 | - | pF |
Applications
- Power management
- Load switch
- Linear mode voltage regulator
- Backlighting applications
- Motor drive
- Relay replacement
Package Outline
LFPAK56; Power-SO8 (SOT669)
Ordering Information
Type number: PHPT60610NY
Package: LFPAK56; Power-SO8
Description: Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669
Marking
Marking code: 0610NAB
2410010103_Nexperia-PHPT60610NYX_C332243.pdf
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