High surge current Schottky diode NH MBR15L60AT ideal for LED drivers and power supply applications
Key Attributes
Model Number:
MBR15L60AT
Product Custom Attributes
Reverse Leakage Current (Ir):
50uA@60V
Non-Repetitive Peak Forward Surge Current:
280A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
630mV@15A
Current - Rectified:
15A
Mfr. Part #:
MBR15L60AT
Package:
TO-220C
Product Description
Product Overview
The MBR15L60AT/FAT series are low forward voltage drop Schottky rectifiers designed for high efficiency and reliability. They offer low power loss, high forward surge capability, and high-frequency operation, making them suitable for various power applications.
Product Attributes
- Brand: Niu Hang
- Certifications: RoHS 2011/65/EU, MIL-STD-202 Method 208
- Lead Finish: Lead Free, RoHS Compliant
- Mounting Position: Any
- Solder Bath Temperature: 260 maximum, 10s, per JESD22-B106
Technical Specifications
| Model | Voltage (V) | Current (A) | Forward Voltage (V) (Typ.) | Reverse Current (uA) (Typ.) | Surge Current (A) (Typ.) | Junction Capacitance (pF) (Typ.) | Thermal Resistance (/W) (Typ.) | Operating Temperature (C) | Storage Temperature (C) |
| MBR15L60AT/FAT | 60 | 15.0 | 0.50 (IF=15A, TJ=125) | 0.50 (VR=60V, TJ=125) | 280 (8.3ms single half sine-wave) | 950 (VR=4V, f=1MHz) | 5.0 (TO-220AB/TO-220F) | -55 to 150 | -55 to 150 |
Applications
High frequency inverters, AC/DC converters, LED drivers.
2410121819_NH-MBR15L60AT_C7428036.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Integrated bias resistor digital transistor YANGJIE DTC143ECA suitable for surface mount and inverter circuit
Product OverviewThe DTC143ECA is a digital transistor with built-in resistors, designed for surface mount applications. Its integrated bias resistors simplify inverter circuit configuration by eliminating the need for external input resistors. This component is manufactured by Yangzhou Yangjie ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
