Nexperia PDTA124TU115 PNP transistor designed to reduce pick and place costs with built in bias resistors

Key Attributes
Model Number: PDTA124TU,115
Product Custom Attributes
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA124TU,115
Package:
SOT-323-3
Product Description

Product Overview

The PDTA124T series are PNP resistor-equipped transistors designed for general-purpose switching and amplification. These devices feature built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. They are suitable for inverter and interface circuits, as well as circuit driver applications.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Product Type: PNP resistor-equipped transistors
  • Resistor Configuration: R1 = 22 k, R2 = open

Technical Specifications

Type Number Package Marking Code NPN Complement Collector-Emitter Voltage (VCEO) (Max) Output Current (IO) (DC) (Max) Bias Resistor (R1)
PDTA124TE SOT416 (SC-75) 3R PDTC124TE -50 V -100 mA 22 k
PDTA124TEF SOT490 (SC-89) 24 PDTC124TEF -50 V -100 mA 22 k
PDTA124TK SOT346 (SC-59) 59 PDTC124TK -50 V -100 mA 22 k
PDTA124TM SOT883 (SC-101) DJ PDTC124TM -50 V -100 mA 22 k
PDTA124TS SOT54 (TO-92 / SC-43) TA124T PDTC124TS -50 V -100 mA 22 k
PDTA124TT SOT23 *AE(1) PDTC124TT -50 V -100 mA 22 k
PDTA124TU SOT323 (SC-70) *7B(1) PDTC124TU -50 V -100 mA 22 k

Limiting Values

Symbol Parameter Conditions Min. Max. Unit
VCBO Collector-base voltage Open emitter - -50 V
VCEO Collector-emitter voltage Open base - -50 V
VEBO Emitter-base voltage Open collector - -5 V
IO Output current (DC) - - -100 mA
ICM Peak collector current - - -100 mA
Ptot Total power dissipation Tamb 25 C, SOT23 (note 1) - 250 mW
Ptot Total power dissipation Tamb 25 C, SOT54 (note 1) - 500 mW
Ptot Total power dissipation Tamb 25 C, SOT323 (note 1) - 200 mW
Ptot Total power dissipation Tamb 25 C, SOT346 (note 1) - 250 mW
Ptot Total power dissipation Tamb 25 C, SOT416 (note 1) - 150 mW
Ptot Total power dissipation Tamb 25 C, SOT490 (notes 1 and 2) - 250 mW
Ptot Total power dissipation Tamb 25 C, SOT883 (notes 2 and 3) - 250 mW
Tstg Storage temperature - -65 +150 C
Tj Junction temperature - - 150 C
Tamb Operating ambient temperature - -65 +150 C

Characteristics

Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-a) Thermal resistance from junction to ambient in free air SOT23 (note 1) - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT54 (note 1) - - 250 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT323 (note 1) - - 625 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT346 (note 1) - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT416 (note 1) - - 833 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT490 (notes 1 and 2) - - 500 K/W
Rth(j-a) Thermal resistance from junction to ambient in free air SOT883 (notes 2 and 3) - - 500 K/W
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A - - -100 nA
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 A - - -1 A
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 A; Tj = 150 C - - -50 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -100 nA
hFE DC current gain VCE = -5 V; IC = -1 mA 100 - - -
VCEsat Collector-emitter saturation voltage IC = -10 mA; IB = -0.5 mA - - -150 mV
R1 Input resistor - 15.4 22 28.6 k
Cc Collector capacitance IE = ie = 0 A; VCB = -10 V; f = 1 MHz - - 3 pF

2411121112_Nexperia-PDTA124TU-115_C454945.pdf

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