Durable Schottky Diode onsemi BAT54T1G Suitable for Automotive Applications and Portable Devices
Key Attributes
Model Number:
BAT54T1G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
600mA
Reverse Leakage Current (Ir):
2uA@25V
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
30V
Voltage - Forward(Vf@If):
800mV@100mA
Current - Rectified:
200mA
Mfr. Part #:
BAT54T1G
Package:
SOD-123
Product Description
Product Overview
These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Their extremely low forward voltage reduces conduction loss, making them ideal for hand-held and portable applications where space is limited.
Product Attributes
- Brand: onsemi (Semiconductor Components Industries, LLC)
- Certifications: AECQ101 Qualified, PPAP Capable, PbFree, Halogen Free/BFR Free, RoHS Compliant
- Material: Schottky Barrier
- Application Notes: Automotive and other applications requiring unique site and control change requirements.
Technical Specifications
| Model | Reverse Voltage (VR) | Forward Power Dissipation (PF) @ TA = 25C | Forward Current (IF) Max | Reverse Breakdown Voltage (V(BR)R) | Total Capacitance (CT) @ VR = 1.0 V, f = 1.0 MHz | Reverse Leakage (IR) @ VR = 25 V | Forward Voltage (VF) @ IF = 0.1 mAdc | Forward Voltage (VF) @ IF = 10 mAdc | Reverse Recovery Time (trr) |
| BAT54T1G, SBAT54T1G | 30 V | 400 mW | 200 mA | 30 V | 7.6 pF (Typ) | 0.5 Adc (Typ) | 0.22 Vdc (Typ) | 0.35 Vdc (Typ) | 5.0 ns (Max) |
2410010304_onsemi-BAT54T1G_C152458.pdf
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