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quality Nexperia PBSS5140U115 PNP transistor designed for muting switching and LCD backlighting applications factory
quality Nexperia PBSS5140U115 PNP transistor designed for muting switching and LCD backlighting applications factory

Nexperia PBSS5140U115 PNP transistor designed for muting switching and LCD backlighting applications

Key Attributes
Model Number: PBSS5140U,115
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
150MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
PBSS5140U,115
Package:
SOT-323
Product Description

Product Overview

The PBSS5140U is a PNP low VCEsat transistor in a SOT323 (SC-70) plastic package, offering 40V collector-emitter voltage and high current capability. It features reduced heat generation for improved device reliability and enhanced performance over standard SOT23 1A packaged transistors. This device is suitable for general purpose switching and muting, LCD backlighting, supply line switching circuits, and battery-driven equipment such as mobile phones, video cameras, and hand-held devices.

Product Attributes

  • Brand: Nexperia (formerly NXP Semiconductors)
  • Package Type: SOT323 (SC-70)
  • Semiconductor Type: PNP Transistor

Technical Specifications

Symbol Parameter Conditions Min. Typ. Max. Unit
VCEO Collector-emitter voltage Open base - - -40 V
ICM Peak collector current - - -2 A
RCEsat Equivalent on-resistance - <500 - m
VCBO Collector-base voltage Open emitter - - -40 V
VEBO Emitter-base voltage Open collector - - -5 V
IC Collector current (DC) - - -1 A
IBM Peak base current - - -1 A
Ptot Total power dissipation Tamb 25 C; note 1 - - 250 mW
Ptot Total power dissipation Tamb 25 C; note 2 - - 350 mW
Tstg Storage temperature -65 - +150 C
Tj Junction temperature - - 150 C
Tamb Operating ambient temperature -65 - +150 C
Rth j-a Thermal resistance from junction to ambient in free air; note 1 - 500 - K/W
Rth j-a Thermal resistance from junction to ambient in free air; note 2 - 357 - K/W
ICBO Collector-base cut-off current VCB = -40 V; IC = 0 - - -100 nA
ICBO Collector-base cut-off current VCB = -40 V; IC = 0; Tamb = 150 C - - -50 A
ICEO Collector-emitter cut-off current VCE = -30 V; IB = 0 - - -100 nA
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 - - -100 nA
hFE DC current gain VCE = -5 V; IC = -1 mA 300 - - -
hFE DC current gain VCE = -5 V; IC = -100 mA 300 - 800 -
hFE DC current gain VCE = -5 V; IC = -500 mA 250 - - -
hFE DC current gain VCE = -5 V; IC = -1 A 160 - - -
VCEsat Saturation voltage IC = -100 mA; IB = -1 mA - - -200 mV
VCEsat Saturation voltage IC = -500 mA; IB = -50 mA - - -250 mV
VCEsat Saturation voltage IC = -1 A; IB = -100 mA - - -500 mV
RCEsat Equivalent on-resistance IC = -500 mA; IB = -50 mA; note 1 - 300 <500 m
VBEsat Base-emitter saturation voltage IC = -1 A; IB = -50 mA - - -1.1 V
VBEon Base-emitter turn-on voltage VCE = -5 V; IC = -1 A - - -1 V
fT Transition frequency IC = -50 mA; VCE = -10 V; f = 100 MHz 150 - - MHz
Cc Collector capacitance VCB = -10 V; IE = Ie = 0; f = 1 MHz - - 12 pF

Notes:
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
Pulse test: tp 300 s; 0.02.


2410121850_Nexperia-PBSS5140U-115_C551952.pdf

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