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quality Nexperia PDTC114ET 215 NPN Resistor Equipped Transistor with 50 Volt Collector Emitter Voltage Rating factory
quality Nexperia PDTC114ET 215 NPN Resistor Equipped Transistor with 50 Volt Collector Emitter Voltage Rating factory

Nexperia PDTC114ET 215 NPN Resistor Equipped Transistor with 50 Volt Collector Emitter Voltage Rating

Key Attributes
Model Number: PDTC114ET,215
Product Custom Attributes
Input Resistor:
13kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTC114ET,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTC114ET is an NPN Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It offers a 100 mA output current capability and features built-in bias resistors, which simplify circuit design, reduce component count, and lower pick-and-place costs. This transistor serves as a cost-effective alternative to the BC847 series in digital applications and is suitable for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia
  • Type: NPN Resistor-Equipped Transistor (RET)
  • Package Type: SOT23
  • Complementary PNP: PDTA114ET

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
VCBO Collector-base voltage Open emitter - - 50 V
VCEO Collector-emitter voltage Open base - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage Positive - - 40 V
VI Input voltage Negative -10 - - V
IO Output current - - - 100 mA
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance from junction to ambient In free air [1] - - 500 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 50 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 2 mA; IB = 0 A; Tamb = 25 C 50 - - V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 400 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 0.8 1.1 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 10 mA; Tamb = 25 C 1.8 2.5 - V
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] - 230 - MHz

[1] See "Section 11: Test information" for resistor calculation and test conditions.

[2] Characteristics of built-in transistor.


2410121948_Nexperia-PDTC114ET-215_C75554.pdf

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