Energy Schottky Barrier Diode onsemi NSR05F40NXT5G designed for camera flash backlighting and DC DC converter
Key Attributes
Model Number:
NSR05F40NXT5G
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
10A
Reverse Leakage Current (Ir):
75uA@40V
Operating Junction Temperature Range:
-40℃~+150℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
460mV@500mA
Current - Rectified:
500mA
Mfr. Part #:
NSR05F40NXT5G
Package:
0402
Product Description
Product Overview
The NSR05F40 Schottky Barrier Diode is optimized for low forward voltage drop and low leakage current, offered in a space-saving Chip Scale Package (CSP). Its low thermal resistance enables higher efficiency and reduced board space, making it suitable for various applications including backlighting, camera flash, DC-DC converters, and protection circuits in mobile devices, digital cameras, and portable computers.
Product Attributes
- Brand: onsemi
- Certifications: AECQ101 Qualified, PPAP Capable (NSV Prefix for Automotive)
- Material: PbFree, Halogen Free/BFR Free, RoHS Compliant
Technical Specifications
| Model | Reverse Voltage (VR) | Forward Current (DC) (IF) | Forward Surge Current (IFSM) | Repetitive Peak Forward Current (IFRM) | Low Forward Voltage Drop | Low Reverse Current | Total Capacitance (CT) |
|---|---|---|---|---|---|---|---|
| NSR05F40 | 40 V | 500 mA | 10 A | 4.0 A | 420 mV @ 500 mA | 15 A @ 10 V VR | 70 pF (VR = 1 V, f = 1 MHz) 27 pF (VR = 10 V, f = 1 MHz) |
2410010303_onsemi-NSR05F40NXT5G_C146713.pdf
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