High reliability NH SF1006DSU ultrafast recovery rectifier designed for LED drivers and inverter applications
Key Attributes
Model Number:
SF1006DSU
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-55℃~+150℃
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
600V
Voltage - Forward(Vf@If):
1.4V@5A
Current - Rectified:
10A
Mfr. Part #:
SF1006DSU
Package:
TO-252
Product Description
Product Overview
The SF1006DSU is an ultrafast recovery rectifier from Niu Hang Specification Electronic Co. Ltd, designed for high-frequency applications. It features glass passivated chip junctions, ultrafast reverse recovery time, low leakage current, and low forward voltage drop for enhanced efficiency and reliability. The device offers high surge capability and is suitable for use in high-frequency inverters, LED drivers, and similar applications.
Product Attributes
- Brand: Niu Hang (NH)
- Model: SF1006DSU
- Certifications: RoHS 2011/65/EU
- Package: TO-252
- Terminals: Plated axial leads, solderable per MIL-STD-750, method 2026
- Polarity: Color band denotes cathode end
- Weight: App. 0.325 grams (0.0113 ounce)
- Origin: Niu Hang Specification Electronic Co. Ltd
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| Maximum Repetitive Peak Reverse Voltage | VRRM | 600 | V | |||
| Maximum RMS voltage | VRMS | 420 | V | |||
| Maximum DC blocking voltage | VDC | 600 | V | |||
| Maximum Average Forward Rectified Current | IF(AV) | See Fig.1 | 10.0 | A | ||
| Peak Forward Surge Current | IFSM | 8.3ms single half sine-wave superimposed on rated load (JEDEC method at rated TL) | 150 | A | ||
| Current Squared Time Per Diode | I2t | t<8.3ms | 41.50 | Asec | ||
| Electrical Characteristics | ||||||
| Maximum Instantaneous Forward Voltage | VF | IF=10.0A, Ta=25 | 1.3 | 1.7 | V | |
| Maximum Instantaneous Reverse Current | IRRM | VR=600V, Ta=25 | 50 | uA | ||
| Typical Junction Capacitance | CJ | VR=4V, 1MHz | 50 | pF | ||
| Maximum Reverse Recovery Time | TRR | IF=0.5A, IR=1.0A, IRR=0.25A | 150 | ns | ||
| Thermal Characteristics | ||||||
| Typical Thermal Resistance (Junction to Ambient) | RJA | Note 2 | 50 | /W | ||
| Typical Thermal Resistance (Junction to Lead) | RJL | Note 2 | 5 | /W | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | |||
2410121819_NH-SF1006DSU_C7427725.pdf
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