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quality High Temperature Rated PNP Resistor Equipped Transistor Nexperia PDTB143ETR with 500 Milliamp Output Current Capability factory
quality High Temperature Rated PNP Resistor Equipped Transistor Nexperia PDTB143ETR with 500 Milliamp Output Current Capability factory

High Temperature Rated PNP Resistor Equipped Transistor Nexperia PDTB143ETR with 500 Milliamp Output Current Capability

Key Attributes
Model Number: PDTB143ETR
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
4.7kΩ
Resistor Ratio:
1
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTB143ETR
Package:
SOT-23
Product Description

Product Overview

The Nexperia PDTB1xxxT series comprises PNP resistor-equipped transistors (RETs) housed in a compact SOT23 (TO-236AB) surface-mounted device (SMD) plastic package. These transistors offer a 500 mA output current capability and a 50 V collector-emitter voltage. Featuring built-in bias resistors with a typical ratio tolerance of 10%, they simplify circuit design and reduce component count. The series is AEC-Q101 qualified, suitable for high-temperature applications up to 175 C, and serves as a cost-saving alternative to BC807 or BC817 series transistors in digital applications. They are ideal for IC inputs control and switching loads.

Product Attributes

  • Brand: Nexperia
  • Package Type: SOT23 (TO-236AB)
  • Technology: PNP Resistor-Equipped Transistor (RET)
  • Qualification: AEC-Q101

Technical Specifications

Type Number Package NPN Complement R1 (Typ) R2 (Typ) VCEO (Max) IO (Max)
PDTB143ET SOT23 (TO-236AB) PDTD143ET 4.7 k 4.7 k -50 V -500 mA
PDTB143XT SOT23 (TO-236AB) PDTD143XT 4.7 k 10 k -50 V -500 mA
PDTB114ET SOT23 (TO-236AB) PDTD114ET 10 k 10 k -50 V -500 mA

Applications

  • IC inputs control
  • Switching loads
  • Digital applications
  • High temperature applications

Marking Codes

Type Number Marking Code
PDTB143ET *4X
PDTB143XT *4Y
PDTB114ET *09

Limiting Values

Symbol Parameter Conditions Min Max Unit
VCBO Collector-base voltage open emitter - -50 V
VCEO Collector-emitter voltage open base - -50 V
VEBO Emitter-base voltage open collector - -10 (PDTB143ET, PDTB114ET) / -7 (PDTB143XT) V
VI Input voltage - -30 to +10 (PDTB143ET, PDTB114ET) / -30 to +7 (PDTB143XT) - V
IO Output current - - -500 mA
Ptot Total power dissipation Tamb 25 C [1] - 320 mW
Ptot Total power dissipation Tamb 25 C [2] - 460 mW
Tj Junction temperature - - 175 C
Tamb Ambient temperature - -55 +175 C
Tstg Storage temperature - -55 +175 C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.

Thermal Characteristics

Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) Thermal resistance junction to ambient in free air [1] - - 470 K/W
Rth(j-a) Thermal resistance junction to ambient in free air [2] - - 327 K/W

[1] FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] FR4 PCB, 4-layer copper, tin-plated and standard footprint.

Characteristics

Symbol Parameter Conditions Min Typ Max Unit
ICBO Collector-base cut-off current VCB = -40 V; IE = 0 A - - -100 nA
ICBO Collector-base cut-off current VCB = -50 V; IE = 0 A - - -100 nA
ICEO Collector-emitter cut-off current VCE = -50 V; IB = 0 A - - -0.5 A
IEBO Emitter-base cut-off current VEB = -5 V; IC = 0 A - - -0.9 (PDTB143ET) / -0.6 (PDTB143XT) / -0.4 (PDTB114ET) mA
hFE DC current gain VCE = -5 V; IC = -50 mA 60 (PDTB143ET) / 70 (PDTB143XT, PDTB114ET) - - -
VCEsat Collector-emitter saturation voltage IC = -50 mA; IB = -2.5 mA - - -100 mV
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A -0.6 to -1.5 (PDTB143ET) / -0.5 to -1.1 (PDTB143XT) / -0.6 to -1.5 (PDTB114ET) - - V
VI(on) On-state input voltage VCE = -0.3 V; IC = -20 mA -1.0 to -2.2 (PDTB143ET) / -1.0 to -2.0 (PDTB143XT) / -1.0 to -3.0 (PDTB114ET) - - V
R1 Bias resistor 1 (input) - 3.3 (PDTB143ET, PDTB143XT) / 7.0 (PDTB114ET) 4.7 (PDTB143ET, PDTB143XT) / 10 (PDTB114ET) 6.1 (PDTB143ET, PDTB143XT) / 13 (PDTB114ET) k
R2/R1 Bias resistor ratio - 0.9 (PDTB143ET, PDTB114ET) / 1.91 (PDTB143XT) 1.0 (PDTB143ET, PDTB114ET) / 2.13 (PDTB143XT) 1.1 (PDTB143ET, PDTB114ET) / 2.34 (PDTB143XT) -
Cc Collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - 11 - pF
fT Transition frequency VCE = -5 V; IC = -50 mA; f = 100 MHz - 140 - MHz

Quality Information

This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.

Package Outline

SOT23 (TO-236AB)

Dimensions in mm:

  • Length: 2.8 to 3.0
  • Width: 2.1 to 2.5
  • Height: 0.9 to 1.4
  • Lead pitch: 0.38 to 0.48

Soldering Footprints

Reflow soldering footprint and Wave soldering footprint dimensions are provided in the datasheet.

Contact Information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com


2410121745_Nexperia-PDTB143ETR_C552140.pdf

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