Surface Mount PNP Resistor Equipped Transistor Nexperia PDTA123JU 115 for Automotive Digital Systems

Key Attributes
Model Number: PDTA123JU,115
Product Custom Attributes
Emitter-Base Voltage VEBO:
10V
Input Resistor:
2.86kΩ
Resistor Ratio:
26
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PDTA123JU,115
Package:
SOT-323
Product Description

Nexperia PDTA123J Series PNP Resistor-Equipped Transistors

Product Overview
The Nexperia PDTA123J series comprises PNP Resistor-Equipped Transistors (RETs) designed for surface-mounted device (SMD) applications. These transistors integrate built-in bias resistors, significantly reducing component count, simplifying circuit design, and lowering pick-and-place costs. They are AEC-Q101 qualified, making them suitable for digital applications in the automotive and industrial segments. The PDTA123J series offers a cost-effective alternative to traditional transistor series like BC847/857 in digital applications, serving as a reliable component for controlling IC inputs and switching loads.

Product Attributes

  • Brand: Nexperia (formerly NXP Standard Product business)
  • Type: PNP Resistor-Equipped Transistor (RET)
  • Certifications: AEC-Q101 qualified
  • Resistor Values: R1 = 2.2 k, R2 = 47 k

Technical Specifications

Type Number Package NPN Complement Package Configuration Output Current Capability (IO) R1 Bias Resistor (Input) R2/R1 Bias Resistor Ratio
PDTA123JE SOT416 (SC-75) PDTC123JE ultra small -100 mA 1.54 - 2.86 k (Typ: 2.20 k) 17 - 26 (Typ: 21)
PDTA123JM SOT883 (SC-101) PDTC123JM leadless ultra small -100 mA 1.54 - 2.86 k (Typ: 2.20 k) 17 - 26 (Typ: 21)
PDTA123JT SOT23 (TO-236AB) PDTC123JT small -100 mA 1.54 - 2.86 k (Typ: 2.20 k) 17 - 26 (Typ: 21)
PDTA123JU SOT323 (SC-70) PDTC123JU very small -100 mA 1.54 - 2.86 k (Typ: 2.20 k) 17 - 26 (Typ: 21)

Key Characteristics

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - -50 V
IO Output current - - - -100 mA
R1 Bias resistor 1 (input) - 1.54 2.20 2.86 k
R2/R1 Bias resistor ratio - 17 21 26 -
VCBO Collector-base voltage open emitter - - -50 V
VEBO Emitter-base voltage open collector - - -10 V
VI (input voltage) Positive - - - +5 V
VI (input voltage) Negative - - - -12 V
ICM Peak collector current single pulse; tp 1 ms - - -100 mA
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - +150 C
Tstg Storage temperature - -65 - +150 C
hFE DC current gain VCE = -5 V; IC = -10 mA 100 - - -
VCEsat Collector-emitter saturation voltage IC = -5 mA; IB = -0.25 mA - - -100 mV
VI(off) Off-state input voltage VCE = -5 V; IC = -100 A - -0.6 -0.5 V
VI(on) On-state input voltage VCE = -0.3 V; IC = -5 mA -1.1 -0.75 - V
Cc Collector capacitance VCB = -10 V; IE = ie = 0 A; f = 1 MHz - - 3 pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz - 180 - MHz

Applications

  • Digital application in automotive and industrial segments
  • Control of IC inputs
  • Switching loads

Package Outlines and Packing Information

Available in various small SMD packages including SOT416 (SC-75), SOT883 (SC-101), SOT23 (TO-236AB), and SOT323 (SC-70). Packing options include 4 mm pitch, 8 mm tape and reel (3000 or 10000 units) and 2 mm pitch, 8 mm tape and reel.

Soldering Information

Reflow soldering is the only recommended soldering method for all package types.

Contact Information

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com


2410121813_Nexperia-PDTA123JU-115_C552066.pdf
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