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quality Nexperia PUMD3 135 Featuring Complementary NPN and PNP Transistors in Compact SOT363 Plastic Package factory
quality Nexperia PUMD3 135 Featuring Complementary NPN and PNP Transistors in Compact SOT363 Plastic Package factory

Nexperia PUMD3 135 Featuring Complementary NPN and PNP Transistors in Compact SOT363 Plastic Package

Key Attributes
Model Number: PUMD3,135
Product Custom Attributes
Output Voltage(VO(on)):
-
Input Resistor:
10kΩ
Resistor Ratio:
1.2
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
PUMD3,135
Package:
TSSOP-6(SOT-363)
Product Description

Product Overview

The Nexperia PUMD3 is a resistor-equipped double transistor (RET) featuring both NPN and PNP configurations within a compact SOT363 (SC-88) SMD plastic package. It offers a 100 mA output current capability and includes built-in bias resistors, simplifying circuit design, reducing component count, and lowering pick-and-place costs. This device is well-suited for digital applications in automotive and industrial segments, serving as a cost-saving alternative for BC847/BC857 series in digital applications, controlling IC inputs, and switching loads.

Product Attributes

  • Brand: Nexperia
  • Package Type: TSSOP6 (SOT363)
  • Complementary Products: PUMH11 (NPN/NPN), PUMB11 (PNP/PNP)

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
Per transistor, for the PNP transistor with negative polarity
VCEO Collector-emitter voltage Open base - - 50 V
IO Output current - - - 100 mA
R1 Bias resistor 1 (input) [1] 7 10 13 k
R2/R1 Bias resistor ratio [1] 0.8 1 1.2 -
VCBO Collector-base voltage Open emitter - - 50 V
VEBO Emitter-base voltage Open collector - - 10 V
VI Input voltage TR1 - - - -10 V
VI Input voltage TR2 - - - -40 V
ICBO Collector-base cut-off current VCB = 50 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tj = 150 C - - 5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 mA; Tamb = 25 C - - 400 A
hFE DC current gain VCE = 5 V; IC = 5 mA; Tamb = 25 C 30 - - -
VCEsat Collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA; Tamb = 25 C - - 100 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C - 0.8 1.1 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 10 mA; Tamb = 25 C 1.8 2.5 - V
TR1 (NPN)
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 2.5 pF
fT Transition frequency VCE = 5 V; IC = 10 mA; f = 100 MHz; Tamb = 25 C [2] - 230 - MHz
TR2 (PNP)
Cc Collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - - 3 pF
fT Transition frequency VCE = -5 V; IC = -10 mA; f = 100 MHz; Tamb = 25 C [2] - 180 - MHz
Per device
Ptot Total power dissipation Tamb 25 C [1] - - 300 mW
Rth(j-a) Thermal resistance from junction to ambient in free air [1] - - 417 K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.

[2] Characteristics of built-in transistor


2409302134_Nexperia-PUMD3-135_C553518.pdf

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