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quality Nexperia PBRN113ZT 215 NPN PB RET transistor designed for switching and high current gain in automotive applications factory
quality Nexperia PBRN113ZT 215 NPN PB RET transistor designed for switching and high current gain in automotive applications factory

Nexperia PBRN113ZT 215 NPN PB RET transistor designed for switching and high current gain in automotive applications

Key Attributes
Model Number: PBRN113ZT,215
Product Custom Attributes
Input Resistor:
1kΩ
Resistor Ratio:
11
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
PBRN113ZT,215
Package:
SOT-23
Product Description

Product Overview

The Nexperia PBRN113ZT is an NPN low VCEsat Performance-Based (PB) Resistor-Equipped Transistor (RET) designed for digital applications in automotive and industrial segments. It features a 600 mA output current capability, low collector-emitter saturation voltage (VCEsat), and high current gain (hFE). The integrated bias resistors reduce component count, pick and place costs, and simplify circuit design. This device is suitable for switching loads and as a medium current peripheral driver.

Product Attributes

  • Brand: Nexperia
  • Product Type: NPN PB RET (Resistor-Equipped Transistor)
  • Package Type: SOT23 (TO-236AB)
  • Resistor R1: 1 k
  • Resistor R2: 10 k
  • PNP Complement: PBRP113ZT

Technical Specifications

Symbol Parameter Conditions Min Typ Max Unit
VCEO Collector-emitter voltage open base - - 40 V
IO Output current [1] - - 600 mA
R1 Bias resistor 1 [2] 0.7 1 1.3 k
R2/R1 Bias resistor ratio [2] 9 10 11 -
VCBO Collector-base voltage open emitter - - 40 V
VEBO Emitter-base voltage open collector - - 5 V
VI Input voltage positive - - 10 V
VI Input voltage negative - - -5 V
IO Output current [1] - - 600 mA
IORM Repetitive peak output current tp 1 ms; 0.33 - - 700 mA
Ptot Total power dissipation Tamb 25 C [1] - - 250 mW
Ptot Total power dissipation Tamb 25 C [2] - - 370 mW
Tj Junction temperature - - - 150 C
Tamb Ambient temperature - -65 - 150 C
Tstg Storage temperature - -65 - 150 C
Rth(j-a) Thermal resistance junction to ambient in free air [1] - - 500 K/W
Rth(j-a) Thermal resistance junction to ambient [2] - - 338 K/W
Rth(j-sp) Thermal resistance junction to solder point - - - 105 K/W
V(BR)CBO Collector-base breakdown voltage IC = 100 A; IE = 0 A; Tamb = 25 C 40 - - V
V(BR)CEO Collector-emitter breakdown voltage IC = 10 mA; IB = 0 A; Tamb = 25 C 40 - - V
ICBO Collector-base cut-off current VCB = 30 V; IE = 0 A; Tamb = 25 C - - 100 nA
ICEO Collector-emitter cut-off current VCE = 30 V; IB = 0 A; Tamb = 25 C - - 0.5 A
IEBO Emitter-base cut-off current VEB = 5 V; IC = 0 A; Tamb = 25 C - - 0.8 mA
hFE DC current gain VCE = 5 V; IC = 50 mA; Tamb = 25 C 300 450 - -
hFE DC current gain VCE = 5 V; IC = 300 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 500 750 - -
hFE DC current gain VCE = 5 V; IC = 600 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 500 720 - -
hFE DC current gain VCE = 5 V; IC = 800 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C 450 650 - -
VCEsat Collector-emitter saturation voltage IC = 50 mA; IB = 2.5 mA; Tamb = 25 C - 25 35 mV
VCEsat Collector-emitter saturation voltage IC = 200 mA; IB = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 60 85 mV
VCEsat Collector-emitter saturation voltage IC = 500 mA; IB = 10 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 160 220 mV
VCEsat Collector-emitter saturation voltage IC = 600 mA; IB = 6 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 270 550 mV
VCEsat Collector-emitter saturation voltage IC = 800 mA; IB = 8 mA; pulsed; tp 300 s; 0.02; Tamb = 25 C - 560 1150 mV
VI(off) Off-state input voltage VCE = 5 V; IC = 100 A; Tamb = 25 C 0.3 0.5 1 V
VI(on) On-state input voltage VCE = 0.3 V; IC = 20 mA; Tamb = 25 C 0.4 0.7 1.4 V
R1 Bias resistor 1 [1] 0.7 1 1.3 k
R2/R1 Bias resistor ratio [1] 9 10 11 -
Cc Collector capacitance VCB = 10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 C - 7 - pF

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided, 35 m copper, tin-plated and standard footprint.
[2] See section "Test information" for resistor calculation and test conditions.


2410121850_Nexperia-PBRN113ZT-215_C551812.pdf

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