N Channel Switch onsemi J111 Designed for Analog Switching and Chopper Stabilized Amplifiers
Key Attributes
Model Number:
J111
Product Custom Attributes
Ciss-Input Capacitance:
-
Pd - Power Dissipation:
-
Drain Current (Idss):
-
FET Type:
-
RDS(on):
-
Gate-Source Breakdown Voltage (Vgss):
-
Gate-Source Cutoff Voltage (VGS(off)):
-
Mfr. Part #:
J111
Package:
TO-92-3L
Product Description
ON Semiconductor J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch
This device is designed for low-level analog switching, sample and hold circuits, and chopper-stabilized amplifiers. Sourced from process 51, the source and drain are interchangeable.
Product Attributes
- Brand: ON Semiconductor
- Origin: Fairchild Semiconductor integration
- Trademarks: ON Semiconductor, Fairchild Semiconductor
Technical Specifications
| Part Number | Top Mark | Package | Packing Method | VDG (V) | VGS (V) | IGF (mA) | TJ, TSTG (C) | PD (mW) | RJA (C/W) | V(BR)GSS (V) | IGSS (nA) | VGS(off) (V) | ID(off) (nA) | IDSS (mA) | rDS(on) () | Cdg(on)/Csg(on) (pF) | Cdg(off) (pF) | Csg(off) (pF) |
| J111 | J111 | TO-92 3L | Bulk | 35 | -35 | 50 | -55 to 150 | 625 | 200 | -35 | -1.0 | -3.0 to -10.0 | 1.0 | 20 | 30 | 28 | 5.0 | 5.0 |
| J111 | J111 | TO-92 3L | Tape and Reel | 35 | -35 | 50 | -55 to 150 | 625 | 200 | -35 | -1.0 | -3.0 to -10.0 | 1.0 | 20 | 30 | 28 | 5.0 | 5.0 |
| J111 | J111 | TO-92 3L | Ammo | 35 | -35 | 50 | -55 to 150 | 625 | 200 | -35 | -1.0 | -3.0 to -10.0 | 1.0 | 20 | 30 | 28 | 5.0 | 5.0 |
| J112 | J112 | TO-92 3L | Bulk | 35 | -35 | 50 | -55 to 150 | 625 | 200 | -35 | -1.0 | -1.0 to -5.0 | 1.0 | 5.0 | 50 | 28 | 5.0 | 5.0 |
| J112 | J112 | TO-92 3L | Tape and Reel | 35 | -35 | 50 | -55 to 150 | 625 | 200 | -35 | -1.0 | -1.0 to -5.0 | 1.0 | 5.0 | 50 | 28 | 5.0 | 5.0 |
| J112 | J112 | TO-92 3L | Tape and Reel | 35 | -35 | 50 | -55 to 150 | 625 | 200 | -35 | -1.0 | -1.0 to -5.0 | 1.0 | 5.0 | 50 | 28 | 5.0 | 5.0 |
| J112 | J112 | TO-92 3L | Ammo | 35 | -35 | 50 | -55 to 150 | 625 | 200 | -35 | -1.0 | -1.0 to -5.0 | 1.0 | 5.0 | 50 | 28 | 5.0 | 5.0 |
| J113 | J113 | TO-92 3L | Bulk | 35 | -35 | 50 | -55 to 150 | 625 | 200 | -35 | -1.0 | -0.5 to -3.0 | 1.0 | 2.0 | 100 | 28 | 5.0 | 5.0 |
| J113 | J113 | TO-92 3L | Ammo | 35 | -35 | 50 | -55 to 150 | 625 | 200 | -35 | -1.0 | -0.5 to -3.0 | 1.0 | 2.0 | 100 | 28 | 5.0 | 5.0 |
| J113 | J113 | TO-92 3L | Ammo | 35 | -35 | 50 | -55 to 150 | 625 | 200 | -35 | -1.0 | -0.5 to -3.0 | 1.0 | 2.0 | 100 | 28 | 5.0 | 5.0 |
| MMBFJ111 | 6P | SOT-23 3L | Tape and Reel | 35 | -35 | 50 | -55 to 150 | 350 | 357 | -35 | -1.0 | -3.0 to -10.0 | 1.0 | 20 | 30 | 28 | 5.0 | 5.0 |
| MMBFJ112 | 6R | SOT-23 3L | Tape and Reel | 35 | -35 | 50 | -55 to 150 | 350 | 357 | -35 | -1.0 | -1.0 to -5.0 | 1.0 | 5.0 | 50 | 28 | 5.0 | 5.0 |
| MMBFJ113 | 6S | SOT-23 3L | Tape and Reel | 35 | -35 | 50 | -55 to 150 | 350 | 357 | -35 | -1.0 | -0.5 to -3.0 | 1.0 | 2.0 | 100 | 28 | 5.0 | 5.0 |
2410121738_onsemi-J111_C274642.pdf
Related Products
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
