Nexperia NHUMH13X NPN Resistor Equipped Double Transistor 80 Volt 100 Milliampere SOT363 Package
Key Attributes
Model Number:
NHUMH13X
Product Custom Attributes
Input Resistor:
4.7kΩ
Resistor Ratio:
10
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
NHUMH13X
Package:
TSSOP-6
Product Description
Nexperia NHUMH10/13/9 Series: 80 V, 100 mA NPN/NPN Resistor-Equipped Double Transistors
Product Overview
The Nexperia NHUMH10/13/9 series comprises NPN/NPN Resistor-Equipped Double Transistors (RET) in a compact SOT363 (SC-88) SMD plastic package. These devices offer a 100 mA output current capability and high breakdown voltage, featuring built-in resistors that simplify circuit design, reduce component count, and lower pick and place costs. Qualified to AEC-Q101 standards, they are ideal for digital applications, serving as a cost-saving alternative for BC846 series in digital applications, controlling IC inputs, and switching loads.
Product Attributes
- Brand: Nexperia
- Package Type: SOT363 (SC-88)
- Technology: NPN/NPN Resistor-Equipped Double Transistors (RET)
- Qualification: AEC-Q101 qualified
Technical Specifications
| Model | R1 (k) | R2 (k) | VCEO (V) | IO (mA) | Marking Code |
|---|---|---|---|---|---|
| NHUMH10 | 2.2 | 47 | 80 | 100 | 6H% |
| NHUMH13 | 4.7 | 47 | 80 | 100 | 6K% |
| NHUMH9 | 10 | 47 | 80 | 100 | 6G% |
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Per Transistor Electrical Characteristics | |||||
| Collector-emitter voltage (open base) | Tamb = 25 C | - | - | 80 | V |
| Output current | Tamb = 25 C | - | - | 100 | mA |
| Collector-base voltage (open emitter) | Tamb = 25 C | - | - | 80 | V |
| Emitter-base voltage (open collector) | Tamb = 25 C | - | - | 7 | V |
| Input voltage (NHUMH10) | Tamb = 25 C | -7 | - | +20 | V |
| Input voltage (NHUMH13) | Tamb = 25 C | -7 | - | +30 | V |
| Input voltage (NHUMH9) | Tamb = 25 C | -7 | - | +40 | V |
| Collector-base breakdown voltage | IC = 100 A; IE = 0 A | 80 | - | - | V |
| Collector-emitter breakdown voltage | IC = 2 mA; IB = 0 A | 80 | - | - | V |
| Collector-base cut-off current | VCB = 80 V; IE = 0 A | - | - | 100 | nA |
| Collector-emitter cut-off current | VCE = 60 V; IB = 0 A | - | - | 100 | nA |
| Collector-emitter cut-off current (Tj = 150 C) | VCE = 60 V; IB = 0 A | - | - | 5 | A |
| Emitter-base cut-off current (NHUMH10) | VEB = 7 V; IC = 0 A | - | - | 270 | A |
| Emitter-base cut-off current (NHUMH13) | VEB = 7 V; IC = 0 A | - | - | 260 | A |
| Emitter-base cut-off current (NHUMH9) | VEB = 7 V; IC = 0 A | - | - | 230 | A |
| DC current gain | VCE = 5 V; IC = 10 mA | 100 | - | - | - |
| Collector-emitter saturation voltage | IC = 10 mA; IB = 0.5 mA | - | - | 100 | mV |
| Off-state input voltage (NHUMH10) | VCE = 5 V ; IC = 100 A | - | 595 | 500 | mV |
| Off-state input voltage (NHUMH13) | VCE = 5 V ; IC = 100 A | - | 625 | 500 | mV |
| Off-state input voltage (NHUMH9) | VCE = 5 V ; IC = 100 A | - | 690 | 500 | mV |
| On-state input voltage (NHUMH10) | VCE = 0.3 V ; IC = 10 mA | 1.2 | 0.81 | - | V |
| On-state input voltage (NHUMH13) | VCE = 0.3 V ; IC = 10 mA | 1.4 | 0.95 | - | V |
| On-state input voltage (NHUMH9) | VCE = 0.3 V ; IC = 10 mA | 1.6 | 1.22 | - | V |
| Bias resistor 1 (input) (NHUMH10) | - | 1.54 | 2.2 | 2.86 | k |
| Bias resistor 1 (input) (NHUMH13) | - | 3.3 | 4.7 | 6.1 | k |
| Bias resistor 1 (input) (NHUMH9) | - | 7 | 10 | 13 | k |
| Bias resistor ratio (R2/R1) (NHUMH10) | - | 17 | 21 | 26 | - |
| Bias resistor ratio (R2/R1) (NHUMH13) | - | 8 | 10 | 12 | - |
| Bias resistor ratio (R2/R1) (NHUMH9) | - | 3.7 | 4.7 | 5.7 | - |
| Transition frequency (built-in transistor) | VCE = 5 V; IC = 10 mA; f = 100 MHz | - | 170 | - | MHz |
| Collector capacitance | VCB = 10 V; IE = ie = 0 A; f = 1 MHz | - | - | 2.5 | pF |
| Limiting Values | |||||
| Total power dissipation (per device) | Tamb 25 C (FR4 PCB) | - | - | 350 | mW |
| Total power dissipation (per transistor) | Tamb 25 C (FR4 PCB) | - | - | 235 | mW |
| Junction temperature | - | - | - | 150 | C |
| Storage temperature | - | -65 | - | 150 | C |
| Thermal Characteristics | |||||
| Thermal resistance (junction to ambient, per device) | In free air (FR4 PCB) | - | - | 358 | K/W |
| Thermal resistance (junction to ambient, per transistor) | In free air (FR4 PCB) | - | - | 532 | K/W |
| Thermal resistance (junction to solder point) | - | - | - | 150 | K/W |
2411121107_Nexperia-NHUMH13X_C3588715.pdf
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