N channel jfet onsemi 2SK2394 6 TB E designed for ultralow noise and high admittance applications
Key Attributes
Model Number:
2SK2394-6-TB-E
Product Custom Attributes
Ciss-Input Capacitance:
10pF@5V
Operating Temperature:
-
Pd - Power Dissipation:
200mW
FET Type:
-
Drain Current (Idss):
10mA@5V
Gate-Source Cutoff Voltage (VGS(off)):
300mV@100uA
Mfr. Part #:
2SK2394-6-TB-E
Package:
TO-236-3
Product Description
2SK2394 N-Channel JFET
The 2SK2394 is an N-Channel JFET designed for applications requiring low noise and high forward transfer admittance. Its small package size allows for compact circuit designs. Key features include large yfs, small Ciss, and ultralow noise figure. This device is suitable for AM tuner RF amplifiers and low-noise amplifier circuits.
Product Attributes
- Brand: onsemi
- Certifications: PbFree Device
Technical Specifications
| Parameter | Test Conditions | Unit | Min | Typ | Max |
|---|---|---|---|---|---|
| VDSX (Drain-to-Source Voltage) | V | 15 | |||
| VGDS (Gate-to-Drain Voltage) | V | -15 | |||
| IG (Gate Current) | mA | 10 | |||
| ID (Drain Current) | mA | 50 | |||
| PD (Allowable Power Dissipation) | TA = 25C | mW | 200 | ||
| TJ (Junction Temperature) | C | 150 | |||
| Tstg (Storage Temperature) | C | -55 | +150 | ||
| V(BR)GDS (Gate-to-Drain Breakdown Voltage) | IG = -10 mA, VDS = 0 V | V | -15 | ||
| IGSS (Gate Cutoff Current) | VGS = -10 V, VDS = 0 V | nA | -1.0 | ||
| VGS(off) (Cutoff Voltage) | VDS = 5 V, ID = 100 A | V | -0.3 | -0.7 | -1.0 |
| IDSS (Drain Current) | VDS = 5 V, VGS = 0 V | mA | 10 | 20 | |
| yfs (Forward Transfer Admittance) | VDS = 5 V, VGS = 0 V, f = 1 kHz | mS | 20 | 38 | |
| Ciss (Input Capacitance) | VDS = 5 V, VGS = 0 V, f = 1 MHz | pF | 10.0 | ||
| Crss (Reverse Transfer Capacitance) | VDS = 5 V, VGS = 0 V, f = 1 MHz | pF | 2.9 | ||
| NF (Noise Figure) | VDS = 5 V, Rg = 1 k, ID = 1 mA, f = 1 kHz | dB | 1.0 |
2410010231_onsemi-2SK2394-6-TB-E_C890126.pdf
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