General purpose dual N Channel JFET transistor onsemi MCH5908H TL E in MCPH5 package with low noise
Key Attributes
Model Number:
MCH5908H-TL-E
Product Custom Attributes
Ciss-Input Capacitance:
10.5pF@5V
FET Type:
2 N-Channel
Operating Temperature:
-
Drain Current (Idss):
16mA@5V
Pd - Power Dissipation:
300mW
Gate-Source Cutoff Voltage (VGS(off)):
300mV@100uA
Mfr. Part #:
MCH5908H-TL-E
Package:
MCPH-5
Product Description
Product Overview
The MCH5908 is a dual N-Channel JFET in a MCPH5 package, equivalent to two 2SK3557 chips. It offers improved mounting efficiency and is suitable for applications requiring low noise and high transfer admittance. This composite type device is designed for general-purpose use.
Product Attributes
- Brand: onsemi
- Package Type: MCPH5
- JEITA/JEDEC Standards: SC-88A, SC-70-5, SOT-353
- Minimum Packing Quantity: 3,000 pcs./reel
- Certifications: Pb Free
Technical Specifications
| Parameter | Symbol | Conditions | Ratings | Unit |
| Absolute Maximum Ratings | ||||
| Drain-to-Source Voltage | VDSX | 15 | V | |
| Gate-to-Drain Voltage | VGDS | --15 | V | |
| Gate Current | IG | 10 | mA | |
| Drain Current | ID | 50 | mA | |
| Allowable Power Dissipation (1 unit) | PD | 200 | mW | |
| Total Power Dissipation | PT | 300 | mW | |
| Junction Temperature | Tj | 150 | C | |
| Storage Temperature | Tstg | --55 to +150 | C | |
| Electrical Characteristics (Ta=25C) | ||||
| Gate-to-Drain Breakdown Voltage | V(BR)GDS | IG=--10A, VDS=0V | --15 | V |
| Gate-to-Source Leakage Current | IGSS | VGS=--10V, VDS=0V | --1.0 | nA |
| Cutoff Voltage | VGS(off) | VDS=5V, ID=100A | --0.3 to --1.5 | V |
| Zero-Gate Voltage Drain Current | IDSS | VDS=5V, VGS=0V | 10.0* to 32.0* | mA |
| Forward Transfer Admittance | |yfs| | VDS=5V, VGS=0V, f=1kHz | 24 to 35 | mS |
| Input Capacitance | Ciss | VDS=5V, VGS=0V, f=1MHz | 10.5 | pF |
| Reverse Transfer Capacitance | Crss | VDS=5V, VGS=0V, f=1MHz | 3.5 | pF |
| Noise Figure | NF | VDS=5V, Rg=1k, ID=1mA, f=1kHz | 1.0 | dB |
| IDSS Classification | ||||
| Rank | IDSS | Unit | ||
| G | 10 to 20 | mA | ||
| H | 16 to 32 | mA | ||
2410121819_onsemi-MCH5908H-TL-E_C891536.pdf
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