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quality Three phase igbt inverter onsemi FSBB20CH60C with integrated gate drivers protection and simplified pcb layout features factory
quality Three phase igbt inverter onsemi FSBB20CH60C with integrated gate drivers protection and simplified pcb layout features factory

Three phase igbt inverter onsemi FSBB20CH60C with integrated gate drivers protection and simplified pcb layout features

Key Attributes
Model Number: FSBB20CH60C
Product Custom Attributes
Mfr. Part #:
FSBB20CH60C
Package:
SPM-CC-027
Product Description

Product Overview

The FSBB20CH60C is an advanced Motion SPM 3 module designed for AC Induction, BLDC, and PMSM motors. It offers a fully-featured, high-performance inverter output stage with optimized gate drive for minimized EMI and losses. Integrated protection features include under-voltage lockouts, over-current shutdown, and fault reporting. The module simplifies PCB layout with built-in bootstrap diodes and dedicated Vs pins, and provides separate open-emitter pins for three-phase current sensing. It operates from a single-grounded power supply and supports 3.3/5V logic interface.

Product Attributes

  • Brand: ON Semiconductor (formerly Fairchild Semiconductor)
  • Certifications: UL Certified No. E209204 (UL1557)
  • Trademarks: Motion SPM 3 Series

Technical Specifications

DeviceFeaturesApplicationIntegrated Power FunctionsIntegrated Drive, Protection, and System Control FunctionsAbsolute Maximum Ratings (Inverter Part)Absolute Maximum Ratings (Control Part)Absolute Maximum Ratings (Bootstrap Diode Part)
FSBB20CH60C
  • 600 V - 20 A 3-Phase IGBT Inverter with Integral Gate Drivers and Protection
  • Low-Loss, Short-Circuit Rated IGBTs
  • Very Low Thermal Resistance Using Al2O3 DBC Substrate
  • Built-in Bootstrap Diodes and Dedicated Vs Pins Simplify PCB Layout
  • Separate Open-Emitter Pins from Low-Side IGBTs for Three-Phase Current Sensing
  • Single-Grounded Power Supply
  • Isolation Rating: 2500 Vrms / min.
Motion Control - Home Appliance / Industrial Motor600 V - 20 A IGBT inverter for three-phase DC / AC power conversion
  • For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting control circuit, Under-Voltage Lock-Out Protection (UVLO)
  • For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP) control supply circuit, Under-Voltage Lock-Out Protection (UVLO)
  • Fault signaling: corresponding to UVLO (low-side supply) and SC faults
  • Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input
  • VPN Supply Voltage: 450 V
  • VPN(Surge) Supply Voltage (Surge): 500 V
  • VCES Collector - Emitter Voltage: 600 V
  • IC Each IGBT Collector Current (TC = 25C, TJ 150C): 20 A
  • ICP Each IGBT Collector Current (Peak) (TC = 25C, TJ 150C, Under 1 ms Pulse Width): 40 A
  • PC Collector Dissipation (TC = 25C per Chip): 62 W
  • TJ Operating Junction Temperature: -40 ~ 150 C
  • VCC Control Supply Voltage: 20 V
  • VBS High-Side Control Bias Voltage: 20 V
  • VIN Input Signal Voltage: -0.3 ~ VCC + 0.3 V
  • VFO Fault Output Supply Voltage: -0.3 ~ VCC + 0.3 V
  • IFO Fault Output Current: 5 mA
  • VSC Current-Sensing Input Voltage: -0.3 ~ VCC + 0.3 V
  • VRRM Maximum Repetitive Reverse Voltage: 600 V
  • IF Forward Current (TC = 25C, TJ 150C): 0.5 A
  • IFP Forward Current (Peak) (TC = 25C, TJ 150C, Under 1 ms Pulse Width): 2.0 A
  • TJ Operating: (Not specified)

2411272338_onsemi-FSBB20CH60C_C124466.pdf

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