Pb-Free NH MMBTA06 NPN Transistor with High Collector Base Breakdown Voltage in SOT-23 Package

Key Attributes
Model Number: MMBTA06
Product Custom Attributes
Emitter-Base Voltage(Vebo):
4V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Mfr. Part #:
MMBTA06
Package:
SOT-23
Product Description

Product Overview

The MMBTA06 is an NPN transistor from Niuhang Specification Electronic Co. Ltd, designed for high current capacity in a compact SOT-23 package. It features an epitaxial planar type construction and is available in a Pb-Free package. This transistor is suitable for general-purpose applications requiring a robust and reliable component.

Product Attributes

  • Brand: Niuhang Specification Electronic Co. Ltd
  • Package: SOT-23
  • Certifications: Epoxy UL: 94V-0
  • Mounting Position: Any
  • Material: Pb-Free Package is available

Technical Specifications

ParameterSymbolMin.Typ.Max.UnitTest Condition
Collector-Emitter Breakdown VoltageV(BR)CEO80--VIC=100mA,IB=10mA
Collector-Base Breakdown VoltageV(BR)CBO80--VVCB=200,IE=0
Emitter-Base Breakdown VoltageV(BR)EBO80--VVEB=6V,IC=0
Collector Cutoff CurrentICBO--100nAVCE=1V,IB=0
Emitter Cutoff CurrentIEBO--0.25AVCE=1V,Ic=100mA
DC Current GainHFE(1)----VCE=1V,IC=10mA
DC Current GainHFE(2)----VCE=1V,Ic=100mA
Base-Emitter Saturation VoltageVBE(Sat)--1.2VIC=100mA,IB=10mA
Collector-Emitter Saturation VoltageVCE(Sat)--0.25VIC=100mA,IB=10mA
Transition FrequencyFT-100-MHzVCE=2V,IC=10mA,f=100MHz
Collector CurrentIc--0.5A-
Collector Power DissipationPC--300mW-
Junction TemperatureTJ-55-150-
Storage Temperature RangeTSTG-55-150-
Thermal Resistance (Junction to Ambient)RJA-416-/WTypical (Note 2)

2410121819_NH-MMBTA06_C7427901.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.