Motion SPM 45 Module onsemi FNA41560B2 600 Volt 15 Amp Rail Package for AC Induction and PMSM Motors
Key Attributes
Model Number:
FNA41560B2
Product Custom Attributes
Mfr. Part #:
FNA41560B2
Package:
SPM-AA-C26
Product Description
Product Overview
The FNA41560 / FNA41560B2 is a Motion SPM 45 module, offering a comprehensive high-performance inverter output platform for AC induction, Brushless DC, and PMSM motors. These modules are optimized to minimize EMI and energy loss by integrating gate drivers with the internal IGBTs. They provide multiple protection features including undervoltage lockout, overcurrent protection, thermal monitoring, and fault reporting. A high-speed HVIC chip requires only a single power supply and converts logic-level gate input signals into high-voltage, high-current drive signals for the internal IGBTs. Separate IGBT negative terminals are available for each phase, supporting a wide range of control algorithms.
Product Attributes
- Brand: ON Semiconductor (formerly Fairchild Semiconductor)
- Product Series: Motion SPM 45 Series
- Certifications: UL Recognized File E209204 (UL1557)
Technical Specifications
| Device | Description | Package | Package Type | Quantity | Voltage Rating | Current Rating | Switching Frequency |
| FNA41560 | Motion SPM 45 Module | SPMAA-A26 | Rail | 12 | 600 V | 15 A | Optimized for 5 kHz |
| FNA41560B2 | Motion SPM 45 Module | SPMAA-C26 | Rail | 12 | 600 V | 15 A | Optimized for 5 kHz |
| Parameter | Symbol | Condition | Min | Typical | Max | Unit |
| Inverter Section | ||||||
| Power Supply Voltage | VPN | Applied between P - NU, NV, NW | 450 | V | ||
| Power Supply Voltage (Surge) | VPN (Surge) | Applied between P - NU, NV, NW | 500 | V | ||
| Collector-Emitter Voltage | VCES | 600 | V | |||
| Collector Current (Single IGBT) | IC | TC = 25C, TJ < 150C | 15 | A | ||
| Collector Current (Peak, Single IGBT) | ICP | TC = 25C, TJ < 150C, pulse width < 1 ms | 30 | A | ||
| Collector Power Dissipation | PC | TC = 25C, per die | 41 | W | ||
| Junction Temperature | TJ | -40 | 150 | C | ||
| Control Section | ||||||
| Control Supply Voltage | VCC | Applied between VCC(H), VCC(L) - COM | 20 | V | ||
| High-Side Control Supply Voltage | VBS | Applied between VB(U) - VS(U), VB(V) - VS(V), VB(W) - VS(W) | 20 | V | ||
| Input Signal Voltage | VIN | Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) - COM | -0.3 | VCC + 0.3 | V | |
| Fault Output Supply Voltage | VFO | Applied between VFO - COM | -0.3 | VCC + 0.3 | V | |
| Fault Output Current | IFO | Sink current at VFO pin | 1 | mA | ||
| Current Sense Input Voltage | VSC | Applied between CSC - COM | -0.3 | VCC + 0.3 | V | |
| Bootstrap Diode Section | ||||||
| Maximum Repetitive Reverse Voltage | VRRM | 600 | V | |||
| Forward Current | IF | TC = 25C, TJ < 150C | 0.50 | A | ||
| Forward Current (Peak) | IFP | TC = 25C, TJ < 150C, pulse width < 1 ms | 1.50 | A | ||
| Junction Temperature | TJ | -40 | 150 | C | ||
| Entire System | ||||||
| Self-Protection Supply Voltage Limit (Short Circuit Capability) | VPN(PROT) | VCC = VBS = 13.5 ~ 16.5 V, TJ = 150C, non-repetitive, < 2 s | 400 | V | ||
| Storage Temperature | TSTG | -40 | 125 | C | ||
| Insulation Voltage | VISO | 60 Hz, sinusoidal, AC 1 minute, ceramic substrate to pin | 2000 | Vrms | ||
| Parameter | Symbol | Condition | Min | Typical | Max | Unit |
| Thermal Resistance | ||||||
| Junction-to-Case Thermal Resistance | Rth(j-c)Q | Inverter IGBT part (per 1/6 module) | 3.0 | C/W | ||
| Junction-to-Case Thermal Resistance | Rth(j-c)F | Inverter FWD part (per 1/6 module) | 4.3 | C/W | ||
| Electrical Characteristics (TJ = 25C, unless otherwise specified) | ||||||
| Inverter Section | ||||||
| Collector-Emitter Saturation Voltage | VCE(SAT) | VCC = VBS = 15 V, VIN = 5 V, IC = 15 A, TJ = 25C | 1.8 | 2.3 | V | |
| FWD Forward Voltage | VF | VIN = 0 V, IF = 15 A, TJ = 25C | 1.8 | 2.3 | V | |
| Switching Time (Turn-ON) | tON | VPN = 300 V, VCC = VBS = 15 V, IC = 15 A, TJ = 25C, Inductive Load (Note 3) | 0.45 | 1.25 | s | |
| Switching Time (Turn-ON, Internal Gate Drive) | tC(ON) | 0.25 | 0.50 | s | ||
| Switching Time (Turn-OFF) | tOFF | 0.75 | 1.25 | s | ||
| Switching Time (Turn-OFF, Internal Gate Drive) | tC(OFF) | 0.25 | 0.50 | s | ||
| Reverse Recovery Time | trr | 0.15 | s | |||
| Collector-Emitter Leakage Current | ICES | VCE = VCES | 1 | mA | ||
| Control Section | ||||||
| Static Supply Current (High-Side) | IQCCH | VCC(H) = 15 V, IN(UH,VH,WH) = 0 V | 0.10 | mA | ||
| Static Supply Current (Low-Side) | IQCCL | VCC(L) = 15 V, IN(UL,VL, WL) = 0 V | 2.65 | mA | ||
| Supply Current (High-Side) | IPCCH | VCC(L) = 15 V, fPWM = 20 kHz, Duty Cycle = 50%, one PWM signal applied to high-side | 0.15 | mA | ||
| Supply Current (Low-Side) | IPCCL | VCC(L) = 15 V, fPWM = 20 kHz, Duty Cycle = 50%, one PWM signal applied to low-side | 3.65 | mA | ||
| Static Supply Current | IQBS | VBS = 15 V, IN(UH, VH, WH) = 0 V | mA | |||
2411271906_onsemi-FNA41560B2_C132696.pdf
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