Power MOSFET ORIENTAL SEMI OSG65R360DEF from GreenMOS E series delivering and EMI balance for power

Name: Power MOSFET ORIENTAL SEMI OSG65R360DEF from GreenMOS E series delivering and EMI balance for power
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: OSG65R360DEF
Availability: InStock

Key Attributes

Model Number: OSG65R360DEF

Product Custom Attributes

Drain To Source Voltage:

650V

Current - Continuous Drain(Id):

12A

RDS(on):

360mΩ@10V,3A

Operating Temperature -:

-55℃~+150℃

Gate Threshold Voltage (Vgs(th)):

3.9V

Reverse Transfer Capacitance (Crss@Vds):

0.9pF@50V

Number:

1 N-channel

Input Capacitance(Ciss):

901pF

Pd - Power Dissipation:

Gate Charge(Qg):

18.8nC@10V

Mfr. Part #:

OSG65R360DEF

Package:

TO-252

Product Description

Product Overview

The OSG65R360DEF is a high voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS E series. Utilizing charge balance technology, it delivers outstanding low on-resistance and reduced gate charge, minimizing conduction loss and enhancing switching performance. This series is optimized for a balance between EMI and efficiency, enabling power supply systems to achieve high efficiency while meeting EMI standards. Ideal for applications including LED lighting, chargers, adapters, TV power, telecom power, server power, and solar/UPS systems.

Product Attributes

Brand: GreenMOS
Manufacturer: Oriental Semiconductor
Technology: Charge Balance Technology
Series: E Series
Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition
Drain-source voltage (min @ Tj(max))	VDS, min @ Tj(max)	700	V
Pulse drain current	ID, pulse	36	A
RDS(ON) max @ VGS=10V	RDS(ON), max @ VGS=10V	360	m
Total Gate Charge	Qg	18.8	nC
Drain-source voltage	VDS	650	V	Tj=25C
Gate-source voltage	VGS	30	V	Tj=25C
Continuous drain current (TC=25 C)	ID	12	A	TC=25 C
Continuous drain current (TC=100 C)	ID	7.6	A	TC=100 C
Pulsed drain current (TC=25 C)	ID, pulse	36	A	TC=25 C
Continuous diode forward current (TC=25 C)	IS	12	A	TC=25 C
Diode pulsed current (TC=25 C)	IS, pulse	36	A	TC=25 C
Power dissipation (TC=25 C)	PD	83	W	TC=25 C
Single pulsed avalanche energy	EAS	216	mJ	VDD=100 V, VGS=10 V, L=75 mH, starting Tj=25 C
MOSFET dv/dt ruggedness	dv/dt	50	V/ns	VDS=0480 V
Reverse diode dv/dt	dv/dt	15	V/ns	VDS=0480 V, ISDID
Operation and storage temperature	Tstg, Tj	-55 to 150	C
Thermal resistance, junction-case	RJC	1.51	C/W
Thermal resistance, junction-ambient	RJA	62	C/W	Device mounted on 1 in square FR-4 board with 2oz. Copper, in a still air environment with Ta=25 C
Drain-source breakdown voltage	BVDSS	650	V	VGS=0 V, ID=250 A
Drain-source breakdown voltage	BVDSS	700	V	VGS=0 V, ID=250 A, Tj=150 C
Gate threshold voltage	VGS(th)	2.9 - 3.9	V	VDS=VGS, ID=250 A
Drain-source on-state resistance	RDS(ON)	0.30 - 0.36		VGS=10 V, ID=3 A
Drain-source on-state resistance	RDS(ON)	0.77		VGS=10 V, ID=3 A, Tj=150 C
Gate-source leakage current	IGSS	100	nA	VGS=30 V
Drain-source leakage current	IDSS	1	A	VDS=650 V, VGS=0 V
Gate resistance	RG	30		=1 MHz, Open drain
Input capacitance	Ciss	901	pF	VGS=0 V, VDS=50 V, =100 kHz
Output capacitance	Coss	52	pF	VGS=0 V, VDS=50 V, =100 kHz
Reverse transfer capacitance	Crss	0.9	pF	VGS=0 V, VDS=50 V, =100 kHz
Effective output capacitance, energy related	Co(er)	31.2	pF	VGS=0 V, VDS=0 V- 400 V
Effective output capacitance, time related	Co(tr)	160	pF	VGS=0 V, VDS=0 V- 400 V
Turn-on delay time	td(on)	30.4	ns	VGS=10 V, VDS=400 V, RG=2 , ID=8 A
Rise time	tr	24.8	ns	VGS=10 V, VDS=400 V, RG=2 , ID=8 A
Turn-off delay time	td(off)	59.6	ns	VGS=10 V, VDS=400 V, RG=2 , ID=8 A
Fall time	tf	15	ns	VGS=10 V, VDS=400 V, RG=2 , ID=8 A
Total gate charge	Qg	18.7	nC	VGS=10 V, VDS=400 V, ID=8 A
Gate-source charge	Qgs	6.4	nC	VGS=10 V, VDS=400 V, ID=8 A
Gate-drain charge	Qgd	5.7	nC	VGS=10 V, VDS=400 V, ID=8 A
Gate plateau voltage	Vplateau	6.4	V	VGS=10 V, VDS=400 V, ID=8 A
Diode forward voltage	VSD	1.3	V	IS=12 A, VGS=0 V
Reverse recovery time	trr	257	ns	VR=400 V, IS=8 A, di/dt=100 A/s
Reverse recovery charge	Qrr	2.6	C	VR=400 V, IS=8 A, di/dt=100 A/s
Peak reverse recovery current	Irrm	18	A	VR=400 V, IS=8 A, di/dt=100 A/s
Product Name		OSG65R360DEF		TO252
Package Marking		OSG65R360DE

Package Information (TO252-J):

Symbol	Min	Nom	Max
A	2.20	2.30	2.38
A1	0.00	-	0.10
A2	0.90	1.01	1.10
b	0.72	-	0.85
b1	0.71	0.76	0.81
b2	0.72	-	0.90
b3	5.13	5.33	5.46
c	0.47	-	0.60
c1	0.46	0.51	0.56
c2	0.47	-	0.60
D	6.00	6.10	6.20
D1	5.25	-	-
E	6.50	6.60	6.70
E1	4.70	-	-
e	2.186	2.286	2.386
H	9.80	10.10	10.40
L	1.40	1.50	1.70
L1	2.90	REF	-
L2	0.508	BSC	-
L3	0.90	-	1.25
L4	0.60	0.80	1.00
L5	0.15	-	0.75
L6	1.80	REF	-
	0	-	8
1	5	7	9
2	5	7	9

Package Information (TO252-P):

Symbol	Min	Nom	Max
A	2.20	2.30	2.38
A1	0.00	-	0.20
A2	0.97	1.07	1.17
b	0.68	0.78	0.90
b3	5.20	5.33	5.46
c	0.43	0.53	0.61
D	5.98	6.10	6.22
D1	5.30	REF	-
E	6.40	6.60	6.73
E1	4.63	-	-
e	2.286	BSC	-
H	9.40	10.10	10.50
L	1.38	1.50	1.75
L1	2.90	REF	-
L2	0.51	BSC	-
L3	0.88	-	1.28
L4	0.50	-	1.00
	0	-	8

Ordering Information:

Package Type	Units/ Reel	Reels/ Inner Box	Units/ Inner Box	Inner Boxes/ Carton Box	Units/ Carton Box
TO252-J	2500	2	5000	5	25000
TO252-P	2500	2	5000	5	25000

2410121620_ORIENTAL-SEMI-OSG65R360DEF_C5175399.pdf

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