N Channel Power MOSFET ORIENTAL SEMI SFS08R03PNF Suitable for Battery Protection and Inverter Circuits
Key Attributes
Model Number:
SFS08R03PNF
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
130A
RDS(on):
3.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3.5V
Reverse Transfer Capacitance (Crss@Vds):
79pF
Input Capacitance(Ciss):
5.547nF
Pd - Power Dissipation:
132W
Output Capacitance(Coss):
1.839nF
Gate Charge(Qg):
67nC@10V
Mfr. Part #:
SFS08R03PNF
Package:
TO-220
Product Description
Product Overview
The Oriental Semiconductor SFS08R03PNF is an Enhancement Mode N-Channel Power MOSFET designed for high-performance power supply systems. Leveraging Oriental Semiconductors unique device design, it offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics. This series is specifically engineered for driving voltages exceeding 10V, making it ideal for applications such as switched-mode power supplies, motor drivers, battery protection, DC-DC converters, inverters, and UPS systems. Its key advantages include low on-state resistance and figure of merit (FOM), extremely low switching loss, and excellent reliability and uniformity.
Product Attributes
- Brand: Oriental Semiconductor
- Product Line: FSMOS
- Material: N-Channel Power MOSFET
- Certifications: Pb Free, RoHS, Halogen Free
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | |
|---|---|---|---|---|---|
| Key Performance Parameters | |||||
| Drain-source voltage (min @ Tj(max)) | VDS, min | 80 | V | ||
| Pulsed drain current | ID, pulse | 520 | A | ||
| Drain-source on-state resistance (max @ VGS=10V) | RDS(ON), max | 3.8 | m | VGS=10V | |
| Total gate charge | Qg | 67 | nC | ||
| Absolute Maximum Ratings | |||||
| Drain-source voltage | VDS | 80 | V | Tj=25C unless otherwise noted | |
| Gate-source voltage | VGS | 20 | V | Tj=25C unless otherwise noted | |
| Continuous drain current (TC=25 C) | ID | 130 | A | TC=25 C | |
| Pulsed drain current (TC=25 C) | ID, pulse | 520 | A | TC=25 C | |
| Continuous diode forward current (TC=25 C) | IS | 130 | A | TC=25 C | |
| Diode pulsed current (TC=25 C) | IS, pulse | 520 | A | TC=25 C | |
| Power dissipation (TC=25 C) | PD | 132 | W | TC=25 C | |
| Single pulsed avalanche energy (5) | EAS | 205 | mJ | VDD=50 V,VGS=10 V, L=0.3 mH, starting Tj=25 C | |
| Operation and storage temperature | Tstg, Tj | -55 to 150 | C | ||
| Thermal Characteristics | |||||
| Thermal resistance, junction-case | RJC | 0.95 | C/W | ||
| Thermal resistance, junction-ambient (4) | RJA | 62 | C/W | Ta=25 C, device mounted on 1 in square FR-4 board with 2oz. Copper, still air environment | |
| Electrical Characteristics | |||||
| Drain-source breakdown voltage | BVDSS | 80 | V | VGS=0 V, ID=250 A | |
| Gate threshold voltage | VGS(th) | 2.5 - 3.5 | V | VDS=VGS, ID=250 A | |
| Drain-source on-state resistance | RDS(ON) | 3.4 - 3.8 | m | VGS=10 V, ID=50 A | |
| Gate-source leakage current | IGSS | -100 - 100 | nA | VGS=20 V; VGS=-20 V | |
| Drain-source leakage current | IDSS | 1 | A | VDS=80 V, VGS=0 V | |
| Gate resistance | RG | 2.6 | =1 MHz, Open drain | ||
| Dynamic Characteristics | |||||
| Input capacitance | Ciss | 5547 | pF | VGS=0 V, VDS=25 V, =100 kHz | |
| Output capacitance | Coss | 1839 | pF | VGS=0 V, VDS=25 V, =100 kHz | |
| Reverse transfer capacitance | Crss | 79 | pF | VGS=0 V, VDS=25 V, =100 kHz | |
| Turn-on delay time | td(on) | 17.7 | ns | VGS=10 V, VDS=40 V, RG=2 , ID=40 A | |
| Rise time | tr | 10.9 | ns | VGS=10 V, VDS=40 V, RG=2 , ID=40 A | |
| Turn-off delay time | td(off) | 43 | ns | VGS=10 V, VDS=40 V, RG=2 , ID=40 A | |
| Fall time | tf | 16.3 | ns | VGS=10 V, VDS=40 V, RG=2 , ID=40 A | |
| Gate Charge Characteristics | |||||
| Total gate charge | Qg | 67 | nC | VGS=10 V, VDS=40 V, ID=40 A | |
| Gate-source charge | Qgs | 22.1 | nC | VGS=10 V, VDS=40 V, ID=40 A | |
| Gate-drain charge | Qgd | 9.4 | nC | VGS=10 V, VDS=40 V, ID=40 A | |
| Gate plateau voltage | Vplateau | 4.6 | V | VGS=10 V, VDS=40 V, ID=40 A | |
| Body Diode Characteristics | |||||
| Diode forward voltage | VSD | 1.3 | V | IS=12 A, VGS=0 V | |
| Reverse recovery time | trr | 67.2 | ns | VR=50 V, IS=50 A, di/dt=100 A/s | |
| Reverse recovery charge | Qrr | 87.9 | nC | VR=50 V, IS=50 A, di/dt=100 A/s | |
| Peak reverse recovery current | Irrm | 2.2 | A | VR=50 V, IS=50 A, di/dt=100 A/s | |
| Package & Pin Information | |||||
| Product Name | SFS08R03PNF | TO220 | SFS08R03PN | ||
| Package Outline Dimensions (TO220-J) | |||||
| Symbol | mm (Min) | mm (Nom) | mm (Max) | ||
| A | 4.40 | 4.50 | 4.60 | ||
| A1 | 1.27 | 1.30 | 1.33 | ||
| A2 | 2.30 | 2.40 | 2.50 | ||
| b | 0.70 | - | 0.90 | ||
| b1 | 1.27 | - | 1.40 | ||
| c | 0.45 | 0.50 | 0.60 | ||
| D | 15.30 | 15.70 | 16.10 | ||
| D1 | 9.10 | 9.20 | 9.30 | ||
| D2 | 13.10 | - | 13.70 | ||
| E | 9.70 | 9.90 | 10.20 | ||
| E1 | 7.80 | 8.00 | 8.20 | ||
| e | 2.54 | BSC | |||
| e1 | 5.08 | BSC | |||
| H1 | 6.30 | 6.50 | 6.70 | ||
| L | 12.78 | 13.08 | 13.38 | ||
| L1 | - | - | 3.50 | ||
| L2 | 4.60 | REF | |||
| P | 3.55 | 3.60 | 3.65 | ||
| Q | 2.73 | - | 2.87 | ||
| 1 | 1 | 3 | 5 | ||
| Ordering Information | |||||
| Package Type | Units/ Tube | Tubes/ Inner Box | Units/ Inner Box | Inner Boxes/ Carton Box | Units/ Carton Box |
| TO220-J | 50 | 20 | 1000 | 5 | 5000 |
2508181758_ORIENTAL-SEMI-SFS08R03PNF_C49005827.pdf
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