power supply solution ORIENTAL SEMI OSG65R380FEF MOSFET with low gate charge and EMI optimization

Key Attributes
Model Number: OSG65R380FEF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
380mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3.9V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
-
Input Capacitance(Ciss):
761.3pF
Pd - Power Dissipation:
31W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
OSG65R380FEF
Package:
TO-220F
Product Description

Product Overview

The OSG65R380FEF is a high-voltage N-Channel Power MOSFET from Oriental Semiconductor's GreenMOS series, engineered with charge balance technology. This technology delivers outstanding low on-resistance and reduced gate charge, minimizing conduction losses and enhancing switching performance. Optimized for a balance between EMI and efficiency, this MOSFET enables power supply systems to achieve high efficiency while meeting EMI standards. It is particularly well-suited for applications in LED lighting, chargers, adapters, TV power, telecom power, server power, and solar/UPS systems.

Product Attributes

  • Brand: Oriental Semiconductor
  • Product Line: GreenMOS E series
  • Technology: Charge Balance Technology
  • Material: Not specified
  • Color: Not specified
  • Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter Symbol Value Unit Test Condition
Product Name OSG65R380FEF
Package Marking OSG65R380FE TO220F
Drain-source voltage (min @ Tj(max)) VDS, min @ Tj(max) 700 V
Pulse drain current ID, pulse 33 A
RDS(ON), max @ VGS=10V RDS(ON), max 380 m
Gate charge Qg 15 nC
Drain-source voltage VDS 650 V Tj=25C
Gate-source voltage VGS 30 V Tj=25C
Continuous drain current (TC=25 C) ID 11 A TC=25 C
Continuous drain current (TC=100 C) ID 7 A TC=100 C
Continuous diode forward current (TC=25 C) IS 15 A TC=25 C
Diode pulsed current (TC=25 C) IS, pulse 45 A TC=25 C
Power dissipation (TC=25 C) PD 31 W TC=25 C
Single pulsed avalanche energy EAS 200 mJ VDD=100 V, VGS=10 V, L=10 mH, starting Tj=25 C
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0480 V
Reverse diode dv/dt dv/dt 15 V/ns VDS=0480 V, ISDID
Operation and storage temperature Tstg, Tj -55 to 150 C
Thermal resistance, junction-case RJC 4 C/W
Thermal resistance, junction-ambient RJA 62.5 C/W Mounted on 1 in FR-4 board with 2oz. Copper, Ta=25 C
Drain-source breakdown voltage BVDSS 650 V VGS=0 V, ID=250 A
Drain-source breakdown voltage (Tj=150 C) BVDSS 700-760 V VGS=0 V, ID=250 A, Tj=150 C
Gate threshold voltage VGS(th) 2.9 - 3.9 V VDS=VGS, ID=250 A
Drain-source on- state resistance RDS(ON) 0.30 - 0.38 VGS=10 V, ID=5.5 A
Drain-source on- state resistance (Tj=150 C) RDS(ON) 0.77 VGS=10 V, ID=5.5 A, Tj=150 C
Gate-source leakage current IGSS 100 nA VGS=30 V
Drain-source leakage current IDSS 1 A VDS=650 V, VGS=0 V
Input capacitance Ciss 761.3 pF VGS=0 V, VDS=50 V, =1 MHz
Output capacitance Coss 62.0 pF VGS=0 V, VDS=50 V, =1 MHz
Reverse transfer capacitance Crss 2.5 pF VGS=0 V, VDS=50 V, =1 MHz
Turn-on delay time td(on) 31.0 ns VGS=10 V, VDS=400 V, RG=2 , ID=6 A
Rise time tr 18.8 ns VGS=10 V, VDS=400 V, RG=2 , ID=6 A
Turn-off delay time td(off) 58.3 ns VGS=10 V, VDS=400 V, RG=2 , ID=6 A
Fall time tf 6.5 ns VGS=10 V, VDS=400 V, RG=2 , ID=6 A
Total gate charge Qg 15.0 nC VGS=10 V, VDS=400 V, ID=6 A
Gate-source charge Qgs 3.7 nC VGS=10 V, VDS=400 V, ID=6 A
Gate-drain charge Qgd 5.8 nC VGS=10 V, VDS=400 V, ID=6 A
Gate plateau voltage Vplateau 5.7 V VGS=10 V, VDS=400 V, ID=6 A
Diode forward voltage VSD 1.3 V IS=11 A, VGS=0 V
Reverse recovery time trr 239.7 ns VR=400 V, IS=6 A, di/dt=100 A/s
Reverse recovery charge Qrr 2.5 C VR=400 V, IS=6 A, di/dt=100 A/s
Peak reverse recovery current Irrm 21.2 A VR=400 V, IS=6 A, di/dt=100 A/s
Package Type TO220F-C Units/Reel: 20, Reels/Inner Box: 20, Units/Inner Box: 1000, Inner Boxes/Carton Box: 6, Units/Carton Box: 6000
Package Type TO220F-J Units/Reel: 50, Reels/Inner Box: 20, Units/Inner Box: 1000, Inner Boxes/Carton Box: 5, Units/Carton Box: 5000

2411220311_ORIENTAL-SEMI-OSG65R380FEF_C2762902.pdf

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