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quality Charge Balance Technology Based Power MOSFET ORIENTAL SEMI OSG65R360DTF for and Low Conduction Loss factory
quality Charge Balance Technology Based Power MOSFET ORIENTAL SEMI OSG65R360DTF for and Low Conduction Loss factory

Charge Balance Technology Based Power MOSFET ORIENTAL SEMI OSG65R360DTF for and Low Conduction Loss

Key Attributes
Model Number: OSG65R360DTF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
360mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
3.9V
Reverse Transfer Capacitance (Crss@Vds):
2.2pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
63W
Gate Charge(Qg):
13.3nC@10V
Mfr. Part #:
OSG65R360DTF
Package:
TO-252-2
Product Description

Product Overview

The Oriental Semiconductor GreenMOS OSG65R360DTF is a high-voltage N-Channel Power MOSFET engineered with charge balance technology for outstanding low on-resistance and reduced gate charge. This series is optimized for extreme switching performance, minimizing conduction and switching losses to deliver superior efficiency and high power density. It offers robust avalanche capability and is ideal for demanding applications such as PC power supplies, LED lighting, telecom power, server power, EV chargers, and solar/UPS systems.

Product Attributes

  • Brand: Oriental Semiconductor
  • Product Line: GreenMOS
  • Technology: Charge Balance Technology
  • Channel Type: N-Channel
  • Mode: Enhancement Mode
  • Certifications: Pb Free, RoHS, Halogen Free

Technical Specifications

Parameter Symbol Value Unit Test Condition
Drain-source voltage (min @ Tj(max)) VDS, min @ Tj(max) 700 V
Pulse drain current ID, pulse 33 A
RDS(ON) (max @ VGS=10V) RDS(ON) 360 m VGS=10V
Total gate charge Qg 13.3 nC VGS=10V, VDS=400V, ID=6A
Drain-source voltage VDS 650 V Tj=25C
Gate-source voltage VGS 30 V
Continuous drain current (TC=25C) ID 11 A TC=25C
Continuous drain current (TC=100C) ID 7 A TC=100C
Continuous diode forward current (TC=25C) IS 11 A TC=25C
Power dissipation (TC=25C) PD 63 W TC=25C
Single pulsed avalanche energy EAS 150 mJ VDD=100 V, VGS=10 V, L=60 mH, starting Tj=25C
Thermal resistance, junction-case RJC 1.98 C/W
Thermal resistance, junction-ambient RJA 62 C/W Mounted on 1 in FR-4 board with 2oz. Copper, still air, Ta=25C
Drain-source breakdown voltage BVDSS 650 V VGS=0 V, ID=250 A
Gate threshold voltage VGS(th) 2.9 - 3.9 V VDS=VGS, ID=250 A
Drain-source on-state resistance RDS(ON) 0.32 - 0.36 VGS=10 V, ID=3 A
Input capacitance Ciss 587.3 pF VGS=0 V, VDS=50 V, =100 kHz
Output capacitance Coss 62.7 pF VGS=0 V, VDS=50 V, =100 kHz
Reverse transfer capacitance Crss 2.2 pF VGS=0 V, VDS=50 V, =100 kHz
Turn-on delay time td(on) 30.7 ns VGS=10 V, VDS=400 V, RG=2 , ID=6 A
Rise time tr 33.9 ns VGS=10 V, VDS=400 V, RG=2 , ID=6 A
Turn-off delay time td(off) 61.3 ns VGS=10 V, VDS=400 V, RG=2 , ID=6 A
Fall time tf 25 ns VGS=10 V, VDS=400 V, RG=2 , ID=6 A
Gate-source charge Qgs 2.2 nC VGS=10 V, VDS=400 V, ID=6 A
Gate-drain charge Qgd 5.4 nC VGS=10 V, VDS=400 V, ID=6 A
Gate plateau voltage Vplateau 6 V VGS=10 V, VDS=400 V, ID=6 A
Diode forward voltage VSD 1.3 V IS=11 A, VGS=0 V
Reverse recovery time trr 262.7 ns VR=400V, IS=6 A, di/dt=100 A/s
Reverse recovery charge Qrr 2.4 C VR=400V, IS=6 A, di/dt=100 A/s
Peak reverse recovery current Irrm 19.4 A VR=400V, IS=6 A, di/dt=100 A/s
Product Name OSG65R360DTF
Package Marking OSG65R360DT
Package Type TO252-C
Units/Reel 2500
Reels/Inner Box 2
Units/Inner Box 5000
Inner Box/Carton Box 5
Units/Carton Box 25000

2411220706_ORIENTAL-SEMI-OSG65R360DTF_C708898.pdf

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