Power MOSFET orisilicon OSM7N65A in TO 220 package designed for high current conduction and switching

Product Overview

The 7N65 is a N-channel MOSFET designed for high-performance applications. It offers maximum R_DS(on) at a specified V_GS, continuous current handling, low gate charge, low gate voltage, and high current conduction capability. This device is suitable for load switching and control applications and is available in a TO-220 package.

Product Attributes

• Package: TO-220
• Pin Configuration: 1.Gate, 2.Drain, 3.Source

Technical Specifications

Absolute Maximum Ratings

Parameters are guaranteed by design and subject to measurement correction. Note: Exceeding the above absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Absolute maximum ratings are applicable for individual applications and not for combined use. Exceeding junction temperature limits will damage the chip. Monitoring ambient temperature does not guarantee that rated temperature limits will not be exceeded. In applications with high power dissipation and poor thermal resistance, the maximum ambient temperature may have to be derated. In applications with moderate power dissipation and low thermal resistance, the maximum ambient temperature can exceed the maximum limit as long as the junction temperature remains within the rated limits. The junction temperature (T_J) depends on the ambient temperature (T_A), the device power dissipation (P_D), and the package's junction-to-ambient thermal resistance (R_JA). The maximum junction temperature is calculated from the ambient temperature and power dissipation using the following formula: T_J = T_A + P_D * R_JA. The junction-to-ambient thermal resistance of the package is based on modeling and calculation methods using a layer board and is mainly dependent on the application and board layout. Special attention to the thermal board design is required in applications with high power dissipation. The value of R_JA may vary with material, layout, and environmental conditions. The rated value of R_JA is based on a layer circuit board. For detailed information on the board structure, please refer to [Reference 1] and [Reference 2]. R_JA is a junction-to-board thermal characteristic parameter, measured in C/W. The package's R_JA is based on modeling and calculation methods using a layer board. The report and use of the electronic package thermal information guide states that thermal characteristic parameters and thermal resistance are not the same. R_JC measures device power flowing along multiple thermal paths, while R_JA involves only one path. Therefore, R_JA includes convection from the package top and radiation from the package, factors that make R_JA more useful in real applications. The maximum junction temperature is calculated from the board temperature (T_B) and power dissipation using the following formula: T_J = T_B + P_D * R_JB. For detailed information on R_JB, please refer to [Reference 1] and [Reference 2]. R_JA and R_JB are for worst-case conditions, i.e., the device soldered to the board to achieve surface mount packaging.

Revision History