Low gate charge and high conduction capability in orisilicon OSM15N10 for load switching applications

Product Overview

This is a channel device in a package, offering a conduction impedance of at Vgs and a continuous current. It features low gate charge, low gate voltage, and high current conduction capability, making it suitable for applications such as load switching and control.

Product Attributes

• Package: Package

Technical Specifications

Note: Parameters are guaranteed by design and corrected by measurement. Exceeding absolute maximum ratings may cause permanent damage. These are stress ratings only. Functional operation at these or any other conditions beyond those indicated in the technical specifications is not implied. Prolonged operation at absolute maximum ratings may affect device reliability. Absolute maximum ratings are for individual applications and not for combined use. Junction temperature exceeding limits will damage the chip. Monitoring ambient temperature does not guarantee that rated temperature limits will not be exceeded. In applications with high power dissipation and poor thermal resistance, the maximum ambient temperature may have to be lowered. In applications with moderate power dissipation and low thermal resistance, the maximum ambient temperature can exceed the maximum limit, provided that the junction temperature remains within rated limits. The junction temperature (Tj) depends on the ambient temperature (Ta), device power dissipation (Pd), and the package's junction-to-ambient thermal resistance (RJA). The maximum junction temperature is calculated from the ambient temperature and power dissipation using the following formula: RJA is based on modeling and calculation methods using a layer board and depends mainly on the application and board layout. Special attention to thermal board design is required in applications with high power dissipation. The value of RJA may vary with material, layout, and environmental conditions. The RJA rating is based on a layer circuit board. For detailed board structure information, refer to and . RJB is a junction-to-board thermal characteristic parameter, in C/W, based on modeling and calculation methods using a layer board. The report and use of the electronic package thermal information guide state that thermal characteristic parameters and thermal resistance are not the same. measures power flowing along multiple thermal paths, while RJB involves only one path. Therefore, thermal paths include convection from the top of the package and radiation from the package, factors that make RJB more useful in real applications. The maximum junction temperature is calculated from the board temperature (Tb) and power dissipation using the following formula: For detailed information on RJB, refer to and . and are for worst-case conditions, i.e., the device soldered on the board for surface mount packages. Version History: Version | Revision Page | Modified Image | Content Change | Formula Change | Remarks