Power MOSFET OSEN IRF1404 40V N Channel TO 220 Package Suitable for Switch Mode Power Supplies
Key Attributes
Model Number:
IRF1404
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
180A
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Output Capacitance(Coss):
1.55nF
Input Capacitance(Ciss):
4.5nF
Pd - Power Dissipation:
220W
Gate Charge(Qg):
130nC@5V
Mfr. Part #:
IRF1404
Package:
TO-220
Product Description
Product Overview
The IRF1404 is a 40V N-Channel MOSFET designed for high-efficiency applications. It features fast switching speeds, high input impedance, low-level drive, and improved dv/dt capability for enhanced ruggedness. This MOSFET is ideal for use in high-efficiency switch-mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China (implied by URL)
- Package Type: TO-220
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage-Continuous | VGS | ±20 | V | |||
| Drain Current-Continuous (Note 2) | ID | 180 | A | |||
| Drain Current-Single Pulsed (Note 1) | IDM | 720 | A | |||
| Power Dissipation (Note 2) | PD | 220 | W | |||
| Max.Operating junction temperature | Tj Max. | 150 | °C | |||
| Electrical Characteristics (Tc=25°C unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage Current (Note 1) | BVDSS | 40 | V | ID=250µA, VGS=0V, TJ=25°C | ||
| Gate Threshold Voltage | VGS(th) | 2.0 | 4.0 | V | VDS=VGS, ID=250μA | |
| Drain-Source On-Resistance | RDS(on) | 3.0 | mΩ | VGS=10V, ID=2A | ||
| Gate-Body Leakage Current | IGSS | ±100 | nA | VGS=±16V, VDS=0 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=40V, VGS=0 | ||
| Forward Transconductance | gfs | 45 | S | VDS=40V, ID=60A | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | 155 | ns | VDD=20V, ID=60A, RG=4Ω,VGS=5V (Note 2) | ||
| Rise Time | Tr | 720 | ns | |||
| Turn-Off Delay Time | Td(off) | 53 | ns | |||
| Fall Time | Tf | 55 | ns | |||
| Total Gate Charge | Qg | 130 | nC | VD=32, VGS=5V, ID=60A(Note 2) | ||
| Gate-Source Charge | Qgs | 30 | nC | |||
| Gate-Drain Charge | Qgd | 50 | nC | |||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | 4500 | pF | VDS=25V, VGS=0, f=1MHz | ||
| Output Capacitance | Coss | 1550 | pF | |||
| Reverse Transfer Capacitance | Crss | 150 | pF | |||
| Diode Characteristics | ||||||
| Continuous Drain-Source Diode Forward Current (Note 2) | IS | 180 | A | |||
| Diode Forward On-Voltage | VSD | 1.3 | V | IS=60A, VGS=0 | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case | Rth(j-c) | 0.57 | °C/W | |||
2410121732_OSEN-IRF1404_C22462935.pdf
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