650V super junction power mosfet osen osd65r650 with low fom rdson and avalanche tested rugged device
Key Attributes
Model Number:
OSD65R650
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
650mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
3pF
Input Capacitance(Ciss):
500pF
Output Capacitance(Coss):
45pF
Pd - Power Dissipation:
28W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
OSD65R650
Package:
TO-252
Product Description
OSD65R650 650V Super-Junction Power MOSFET
The OSD65R650 is a 650V super-junction Power MOSFET designed for high-efficiency applications. It features very low FOM RDS(on), 100% avalanche tested, and improved dv/dt capability for high ruggedness. This device is RoHS compliant.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSD65R650
- Revision: Rev 21.2.10
- Certifications: RoHS compliant
Applications
- High efficiency switch mode power supplies
- Power factor correction
- Electronic lamp ballast
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| VDSS | Drain-Source Voltage () | 650 | V | |
| VGS | Gate-Source Voltage-Continuous () | 30 | V | |
| ID | Drain Current-Continuous () (Note 2) | 7 | A | |
| IDM | Drain Current-Single Plused () (Note 1) | 22.5 | A | |
| PD | Power Dissipation () (Note 2) | 28 | W | |
| Tj Max. | Operating junction temperature () | 150 | ||
| Static Characteristics | ||||
| BVDSS | Drain-Source Breakdown Voltage Current () (Note 1) | 650 | V | ID=250A VGS=0VTJ=25C |
| VGS(th) | Gate Threshold Voltage () | 2.0 -- 4.0 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance () | -- 0.55 0.65 | VGS=10VID=3.5A | |
| IGSS | Gate-Body Leakage Current () | -- -- 100 | nA | VGS=30VVDS=0 |
| IDSS | Zero Gate Voltage Drain Current () | -- -- 1 | A | VDS=650VVGS=0 |
| Switching Characteristics | ||||
| Td(on) | Turn-On Delay Time () | -- 20 -- | ns | VDS=300V,ID=3.5A RG=25 |
| Tr | Rise Time () | -- 10 -- | ns | |
| Td(off) | Turn-Off Delay Time () | -- 25 -- | ns | |
| Tf | Fall Time () | -- 25 -- | ns | |
| Qg | Total Gate Charge () | -- 10 -- | nC | VDS=480V,VGS=10V ID=3.5A |
| Qgs | Gate-Source Charge () | -- 4.0 -- | nC | |
| Qgd | Gate-Drain Charge () | -- 5.0 -- | nC | |
| Dynamic Characteristics | ||||
| Ciss | Input Capacitance () | -- 500 -- | pF | VDS=50VVGS=0 f=1MHz |
| Coss | Output Capacitance () | -- 45 -- | pF | |
| Crss | Reverse Transfer Capacitance () | -- 3 -- | pF | |
| IS | Continuous Drain-Source Diode Forward Current () | -- -- 7 | A | |
| VSD | Diode Forward On-Voltage () | -- -- 1.3 | V | IS=3.5AVGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case () | -- -- 4.46 | /W | |
2410121732_OSEN-OSD65R650_C20607779.pdf
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