Durable OSEN OSD50N10G 100V N Channel MOSFET with High Input Impedance and Fast Switching Speed
Key Attributes
Model Number:
OSD50N10G
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
50A
RDS(on):
14.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF
Input Capacitance(Ciss):
1.58nF
Output Capacitance(Coss):
350pF
Pd - Power Dissipation:
135W
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
OSD50N10G
Package:
TO-252
Product Description
OSD50N10G 100V N-CHANNEL MOSFET
The OSD50N10G is a 100V N-Channel MOSFET designed for high efficiency applications. It features fast switching speed, high input impedance, low level drive, and improved dv/dt capability with high ruggedness. This MOSFET is suitable for use in high efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts. It is available in a TO-252 package.
Product Attributes
- Brand: OSEN
- Origin: China (implied by .cn domain)
- Publication Order Number: OSD50N10G
- Revision: 21.2.10
Technical Specifications
| Symbol | Parameters | Unit | Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | V | 100 | |||
| VGS | Gate-Source Voltage-Continuous | V | ±20 | |||
| ID | Drain Current-Continuous (Note 2) | A | 50 | |||
| IDM | Drain Current-Single Pulsed (Note 1) | A | 200 | |||
| PD | Power Dissipation (Note 2) | W | 135 | |||
| Tj | Max.Operating junction temperature | 150 | ||||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage Current (Note 1) | V | ID=250µA, VGS=0V, TJ=25°C | 100 | -- | -- |
| VGS(th) | Gate Threshold Voltage | V | VDS=VGS, ID=250µA | 1.2 | 1.8 | 2.5 |
| RDS(on) | Drain-Source On-Resistance | mΩ | VGS=10V, ID=20A | -- | 14.5 | -- |
| IGSS | Gate-Body Leakage Current | nA | VGS=±20V, VDS=0 | -- | -- | ±100 |
| IDSS | Zero Gate Voltage Drain Current | µA | VDS=100V, VGS=0 | -- | -- | 1 |
| gfs | Forward Transconductance | S | VDS=15V, ID=25A | -- | 15 | -- |
| Switching Characteristics | ||||||
| Td(on) | Turn-On Delay Time | ns | VDS=55V, ID=50A, RG=5Ω (Note 2) | -- | 12.5 | -- |
| Tr | Rise Time | ns | -- | 12.5 | -- | |
| Td(off) | Turn-Off Delay Time | ns | -- | 85 | -- | |
| Tf | Fall Time | ns | -- | 90 | -- | |
| Qg | Total Gate Charge | nC | VDS=55V, VGS=10V, ID=50A (Note 2) | -- | 45 | -- |
| Qgs | Gate-Source Charge | nC | -- | 6.5 | -- | |
| Qgd | Gate-Drain Charge | nC | -- | 10 | -- | |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | pF | VDS=25V, VGS=0, f=1MHz | -- | 1580 | -- |
| Coss | Output Capacitance | pF | -- | 350 | -- | |
| Crss | Reverse Transfer Capacitance | pF | -- | 120 | -- | |
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | A | -- | -- | 50 | |
| VSD | Diode Forward On-Voltage | V | IS=20A, VGS=0 | -- | -- | 1.4 |
| Rth(j-c) | Thermal Resistance, Junction to Case | °C/W | -- | -- | 0.93 | |
Notes:
Note 1: Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 2: Pulse test: PW <= 300µs, duty cycle <= 2%.
2410121732_OSEN-OSD50N10G_C20607767.pdf
Related Products
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
General purpose Zener diode YANGJIE BZX584B4V3 with cathode polarity and RoHS compliant certification
Product OverviewThe BZX584B2V4 THRU BZX584B36V series are high-reliability Zener diodes featuring very sharp reverse characteristics and low reverse current levels. They are designed for general-purpose applications and are available with Zener voltages ranging from 2.4V to 36V.Product AttributesBra...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
