switching OSEN OSPF11N50 500V N CHANNEL MOSFET with improved dv dt and avalanche energy capability
Key Attributes
Model Number:
OSPF11N50
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
11A
RDS(on):
490mΩ
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
20pF
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
1.515nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
43nC@10V
Mfr. Part #:
OSPF11N50
Package:
TO-220F
Product Description
Product Overview
The OSPF11N50 is a 500V N-CHANNEL MOSFET designed for high-efficiency applications. It features fast switching speed, high input impedance, low-level drive capability, and improved dv/dt capability with high ruggedness. Tested for avalanche energy, this MOSFET is suitable for high-efficiency switch mode power supplies, power factor correction, and electronic lamp ballasts.
Product Attributes
- Brand: OSEN
- Origin: China (implied by .cn domain and Chinese text)
- Model Number: OSPF11N50
- Publication Order Number: OSPF11N50
- Revision: Rev 21.2.10
Technical Specifications
| Symbol | Parameters | Ratings | Unit | Conditions |
| VDSS | Drain-Source Voltage | 500 | V | |
| VGS | Gate-Source Voltage-Continuous | 30 | V | |
| ID | Drain Current-Continuous (Note 2) | 11 | A | |
| IDM | Drain Current-Single Pulsed (Note 1) | 44 | A | |
| PD | Power Dissipation (Note 2) | 48 | W | |
| Tj Max. | Operating junction temperature | 150 | ||
| BVDSS | Drain-Source Breakdown Voltage (Note 1) | 500 | V | ID=250A VGS=0VTJ=25C |
| VGS(th) | Gate Threshold Voltage | 2.0 -- 4.0 | V | VDS=VGSID=250A |
| RDS(on) | Drain-Source On-Resistance | -- 0.49 -- | VGS=10VID=5.5A | |
| IGSS | Gate-Body Leakage Current | -- -- 100 | nA | VGS=30VVDS=0 |
| IDSS | Zero Gate Voltage Drain Current | -- -- 1 | A | VDS=500VVGS=0 |
| Td(on) | Turn-On Delay Time | -- 25 60 | ns | VDS=250VID=11A RG=3Note 2 |
| Tr | Rise Time | -- 100 210 | ns | |
| Td(off) | Turn-Off Delay Time | -- 130 270 | ns | |
| Tf | Fall Time | -- 100 210 | ns | |
| Qg | Total Gate Charge | -- 43 56 | nC | VDS=400VGS=10V ID=11ANote 2 |
| Qgs | Gate-Source Charge | -- 7.5 -- | nC | |
| Qgd | Gate-Drain Charge | -- 18.5 -- | nC | |
| Ciss | Input Capacitance | -- 1515 2055 | pF | VDS=25VVGS=0 f=1MHz |
| Coss | Output Capacitance | -- 180 235 | pF | |
| Crss | Reverse Transfer Capacitance | -- 20 25 | pF | |
| IS | Continuous Drain-Source Diode Forward Current (Note 2) | -- -- 11 | A | |
| VSD | Diode Forward On-Voltage | -- -- 1.4 | V | IS=11AVGS=0 |
| Rth(j-c) | Thermal Resistance, Junction to Case | -- -- 2.6 | /W |
Notes:
Note 1: Repetitive Rating : Pulse width limited by maximum junction temperature
Note 2: Pulse test: PW <= 300us , duty cycle <= 2%
2410121732_OSEN-OSPF11N50_C20607819.pdf
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