N Channel Power MOSFET NH NPS16N65F Featuring Low Gate Charge and High EAS for Switching Applications
Key Attributes
Model Number:
NPS16N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
10A
RDS(on):
830.8mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
28pF
Number:
1 N-channel
Output Capacitance(Coss):
225pF
Input Capacitance(Ciss):
2.75nF
Pd - Power Dissipation:
14W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
NPS16N65F
Package:
TO-220F
Product Description
Product Overview
The NPS16N65F is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and high-speed switching, this MOSFET features low RDS(ON), low gate charge, and high EAS for enhanced reliability. It is ideal for applications such as AC/DC converters, adaptors, chargers, LED drives, high-frequency circuits, and switching power supplies. The product is 100% UIS and RG tested.
Product Attributes
- Brand: Niuhang (NH)
- Origin: Guangdong, China
- Product Line Code: FF
- Certifications: RoHS COMPLIANT, Pb-Free
- Package: TO-220F
Technical Specifications
| Model ID | VDS (Volts) | Current (Amperes) | RDS(ON) Type @ 10V (m) | Package | Weight (Grams) |
|---|---|---|---|---|---|
| NPS16N65F | 650 | 16 | 480.00 | TO-220F | 2.048 |
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 650 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Note 1) | Ta= 25 | ID | 16 | A | ||
| Continuous Drain Current (Note 1) | Ta= 100 | ID | 10 | A | ||
| Drain Current-Pulsed (Note 1) | TJ< 150 | IDM | 64 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 34 | W | ||
| Power Dissipation Derating Factor | Above 25 Ta= 100 | DF | 0.27 | W/ | ||
| Junction Temperature | TJ | -55 | 150 | |||
| Storage Temperature Range | TSTD | -55 | 150 | |||
| Avalanche Current,Single Pulse (Note 1) | L= 0.5 mH | IAS | 58.2 | A | ||
| Single Pulse Avalanche Energy (Note 1) | L= 0.5 mH,VDD= 325 V | EAS | 845 | mJ | ||
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | 52.0 | /W | ||
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | 3.70 | /W | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Static Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 650 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.772 | -- | V/ |
| Drain-Source Leakage Current | VDS= 650 V,VGS=0V | I DSS | -- | -- | 1.0 | uA |
| Gate-Body Leakage Current | VGS= 30 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Static On Characteristics | ||||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 8 A,VGS= 10 V | R DS(ON) | -- | 480.00 | 620.00 | m |
| Drain-Source On Resistance | ID= 8 A,VGS= 4.5 V | R DS(ON) | -- | 552.00 | 830.80 | m |
| Dynamic Characteristics | ||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 2.50 | -- | |
| Input Capacitance | VDS= 25 V | C iss | -- | 2750.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 225.0 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 28.0 | -- | pF |
| Switching Parameters (Test Circuit & Waveform See Fig.14) | ||||||
| Turn-On Delay Time | VDS= 325 V | t d(on) | -- | 40.0 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 50.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 175.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 69.0 | -- | ns |
| Gate Charge Parameters (Test Circuit & Waveform See Fig.15) | ||||||
| Total Gate Charge | VDS= 325 V | Q g | -- | 60.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 15.0 | -- | nC |
| Gate-Drain Charge | ID= 8 A | Q gd | -- | 25.0 | -- | nC |
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | ||||||
| Max. Diode Forward Current | I S | -- | -- | 16 | A | |
| Max. Pulsed Forward Current | I SM | -- | -- | 56 | A | |
| Diode Forward Voltage | ID= 8 A,VGS=0V | V SD | -- | 0.87 | 1.2 | V |
| Reverse Recovery Time | ID= 8 A,di/dt= 100 A/us | t rr | -- | 475 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 325 V | Q rr | -- | 7.0 | -- | uC |
| OUTLINE DRAWINGS - TO-220F | |||
|---|---|---|---|
| Dim | Description | Millimeters | Inches |
| A | 9.25 - 10.75 | 0.36 - 0.42 | |
| B | 2.30 - 2.90 | 0.09 - 0.11 | |
| C | 4.20 - 5.20 | 0.17 - 0.20 | |
| D | 0.35 - 0.75 | 0.01 - 0.03 | |
| E | 14.80 - 16.80 | 0.58 - 0.66 | |
| F | 8.25 - 9.75 | 0.32 - 0.38 | |
| G | 12.15 - 14.15 | 0.48 - 0.56 | |
| H | 2.40 - 3.00 | 0.09 - 0.12 | |
| J | 1.10 - 1.50 | 0.04 - 0.06 | |
| K | 0.60 - 1.00 | 0.02 - 0.04 | |
| M | 2.20 - 3.00 | 0.09 - 0.12 | |
| O | 2.70 - 3.50 | 0.11 - 0.14 | |
| P | 2.25 - 2.85 | 0.09 - 0.11 | |
| PACKING INFORMATION | |||||
|---|---|---|---|---|---|
| Package Code | Package Method | Inner Box Size LWH(mm) | Quantity (Pcs/Inner Box) | Outer Carton Size LWH(mm) | Quantity (Pcs/Carton) |
| TO-220F | Tube Packaging | 560x155x55 | 1000 | 570284185 | 5000 |
| Recommended wave soldering condition | |||
|---|---|---|---|
| Pb-free devices | |||
| Product Peak Temperature | 260 +0/-5 C | Soldering Time | 5 +1/-1 seconds |
| Recommended temperature profile for IR reflow | |||||
|---|---|---|---|---|---|
| Profile feature | Sn-Pb eutectic Assembly | Pb-free Assembly | |||
| Average ramp-up rate (Tsmax to Tp) | 3C/second max. | 3C/second max. | |||
| Preheat | |||||
| Temperature Min(TS min) | 100C | 150C | |||
| Temperature Max(TS max) | 150C | 200C | |||
| Time(ts min to ts max) | 60-120 seconds | 60-180 seconds | |||
| Time maintained above: | |||||
| Temperature (TL) | 183C | 217C | |||
| Time (tL) | 60-150 seconds | 60-150 seconds | |||
| Peak Temperature(TP) | 240 +0/-5 C | 260 +0/-5 C | |||
| Time within 5C of actual peak temperature(tp) | 10-30 seconds | 20-40 seconds | |||
| Ramp down rate | 6C/second max. | 6C/second max. | |||
| Time 25 C to peak temperature | 6 minutes max. | 8 minutes max. | |||
2411011351_NH-NPS16N65F_C41784109.pdf
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