70V N Channel Power MOSFET OSEN OSP80N07T Featuring High Power Dissipation and Fast Switching Speeds
Key Attributes
Model Number:
OSP80N07T
Product Custom Attributes
Drain To Source Voltage:
70V
Current - Continuous Drain(Id):
80A
RDS(on):
8.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF
Pd - Power Dissipation:
156W
Input Capacitance(Ciss):
5.84nF
Output Capacitance(Coss):
225pF
Gate Charge(Qg):
92nC@10V
Mfr. Part #:
OSP80N07T
Package:
TO-220AB
Product Description
OSP80N07T 70V N-Channel Advanced Power MOSFET
The OSP80N07T is a 70V N-Channel Advanced Power MOSFET designed for high-performance applications. It features fast switching speeds, low gate charge, and high power and current handling capabilities, making it ideal for DC to DC converters and synchronous rectification. This product is RoHS compliant.
Product Attributes
- Brand: OSEN
- Publication Order Number: OSP80N07T
- Certifications: RoHS compliant
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Conditions |
|---|---|---|---|---|
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 70 | V | |
| Gate-Source Voltage-Continuous | VGS | ±20 | V | |
| Drain Current-Continuous (Note 2) | ID | 80 | A | |
| Drain Current-Single Pulsed (Note 1) | IDM | 320 | A | |
| Power Dissipation (Note 2) | PD | 156 | W | |
| Max.Operating junction temperature | Tj | 150 | ||
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage (Note 1) | BVDSS | 70 | V | ID=250µA, VGS=0V |
| Gate Threshold Voltage | VGS(th) | 2.0 -- 4.0 | V | VDS=VGS, ID=250µA |
| Drain-Source On-Resistance | RDS(on) | -- 6.5 8.5 | mΩ | VGS=10V, ID=20A |
| Gate-Body Leakage Current | IGSS | -- ±100 | nA | VGS=±20V, VDS=0 |
| Zero Gate Voltage Drain Current | IDSS | -- 1 | µA | VDS=70V, VGS=0 |
| Forward Transconductance | gfs | -- 15 -- | S | VDS=15V, ID=10A |
| Switching Characteristics | ||||
| Turn-On Delay Time | Td(on) | -- 23 -- | ns | VGS=10V, VDS=35V,ID=40A, RG=3Ω |
| Rise Time | Tr | -- 22 -- | ns | |
| Turn-Off Delay Time | Td(off) | -- 46 -- | ns | |
| Fall Time | Tf | -- 9 -- | ns | |
| Total Gate Charge | Qg | -- 92 -- | nC | VDS=60V, VGS=10V, ID=40A |
| Gate-Source Charge | Qgs | -- 23 -- | nC | |
| Gate-Drain Charge | Qgd | -- 35 -- | nC | |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | -- 5840 -- | pF | VDS=35V, VGS=0, f=1MHz |
| Output Capacitance | Coss | -- 225 -- | pF | |
| Reverse Transfer Capacitance | Crss | -- 205 -- | pF | |
| Diode Forward Current (Note 2) | IS | -- 80 | A | |
| Diode Forward On-Voltage | VSD | -- 1.2 | V | IS=20A, VGS=0 |
| Thermal Resistance, Junction to Case | Rth(j-c) | -- 0.8 | °C/W | |
2504101957_OSEN-OSP80N07T_C47148329.pdf
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