N Channel Power MOSFET NH NSH079N15P5 Designed for in DC DC Converters and Synchronous Rectification
Key Attributes
Model Number:
NSH079N15P5
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
113A
RDS(on):
7.9mΩ@10V,20A
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
12.3pF@75V
Number:
1 N-channel
Input Capacitance(Ciss):
4.362nF@75V
Pd - Power Dissipation:
273W
Gate Charge(Qg):
52nC
Mfr. Part #:
NSH079N15P5
Package:
PDFN5x6-8
Product Description
Product Overview
The NSH079N15P5 is an N-Channel Enhanced Shielded Gate Trench Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and high-speed switching, this MOSFET features low RDS(ON), low gate charge, and high EAS for enhanced reliability. It is ideal for demanding applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and UPS (Uninterruptible Power Supplies).
Product Attributes
- Brand: Niuhang (NH)
- Product Line Code: FF
- Certifications: RoHS Compliant, Pb-Free
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | ||||||
| Drain-Source Voltage | VGS=0V, ID=250uA | VDS | 150 | V | ||
| Continuous Drain Current | Ta= 25 | ID | 113 | A | ||
| Continuous Drain Current | Ta= 100 | ID | 90 | A | ||
| RDS(ON) Type | ID= 20 A,VGS= 10 V | RDS(ON) | 7.90 | 8.80 | m | |
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | Ta= 25 | ID | 113 | A | ||
| Continuous Drain Current | Ta= 100 | ID | 90 | A | ||
| Drain Current-Pulsed | TJ< 175 | IDM | 452 | A | ||
| Maximum Power Dissipation | Ta= 25 | PD | 273 | W | ||
| Maximum Power Dissipation | Ta= 100 | PD | 136 | W | ||
| Power Dissipation Derating Factor | Above 25 | DF | 1.82 | W/ | ||
| Junction Temperature | TJ | -55 | 175 | |||
| Storage Temperature Range | TSTD | -55 | 175 | |||
| Avalanche Current,Single Pulse | L= 0.5 mH | IAS | 36 | A | ||
| Single Pulse Avalanche Energy | L= 0.5 mH,VDD= 75 V | EAS | 324 | mJ | ||
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 150 | -- | -- | V |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.143 | -- | V/ |
| Drain-Source Leakage Current | VDS= 150 V,VGS=0V | I DSS | -- | -- | 1 | uA |
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | -- | -- | 100 | nA |
| Forward Transconductance | ID= 20 A,VDS= 5 V | gfs | -- | 70 | -- | S |
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 2.0 | 3.0 | 4.0 | V |
| Drain-Source On Resistance | ID= 20 A,VGS= 10 V | R DS(ON) | -- | 7.90 | 8.80 | m |
| Drain-Source On Resistance | ID= 20 A,VGS= 4.5 V | R DS(ON) | -- | 9.09 | 11.79 | m |
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 0.95 | -- | |
| Input Capacitance | VDS= 75 V | C iss | -- | 4362.0 | -- | pF |
| Output Capacitance | VGS= 0 V | C oss | -- | 332.7 | -- | pF |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 12.3 | -- | pF |
| Turn-On Delay Time | VDS= 75 V | t d(on) | -- | 18.8 | -- | ns |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 11.0 | -- | ns |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 29.0 | -- | ns |
| Turn-Off Rise Time | RG= 10 | t f | -- | 13.2 | -- | ns |
| Total Gate Charge | VDS= 75 V | Q g | -- | 52.0 | -- | nC |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 19.7 | -- | nC |
| Gate-Drain Charge | ID= 20 A | Q gd | -- | 5.5 | -- | nC |
| Max. Diode Forward Current | I S | -- | -- | 113 | A | |
| Max. Pulsed Forward Current | I SM | -- | -- | 396 | A | |
| Diode Forward Voltage | ID= 20 A,VGS=0V | V SD | -- | 0.86 | 1.2 | V |
| Reverse Recovery Time | ID= 20 A,di/dt= 100 A/us | t rr | -- | 80 | -- | ns |
| Reverse Recovery Charge | VGS= 10 V,VDS= 75 V | Q rr | -- | 160.0 | -- | nC |
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | ||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 60 | -- | /W |
| Thermal Resistance Junction-Case | Device Mounted On 1 in 2 FR-4 Board With 2oz | RJC | -- | 0.55 | -- | /W |
| Package Information | ||||||
| Package Type | PDFN5*6 | |||||
| Weight | App. 0.087 | 0.00307 | Gram(s)/Ounce | |||
Note: 1. Pulse Width Limited By Max. Junction Temperature. (See Fig. 13).
2504101957_NH-NSH079N15P5_C46352554.pdf
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