Low RDS ON N Channel Enhancement Mode MOSFET NH NTS170N06S for Battery Management and Motor Control

Key Attributes
Model Number: NTS170N06S
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
36A
Operating Temperature -:
-55℃~+175℃
RDS(on):
17mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
95pF
Number:
1 N-channel
Output Capacitance(Coss):
100pF
Pd - Power Dissipation:
48W
Input Capacitance(Ciss):
2.1nF@30V
Gate Charge(Qg):
46nC@30V
Mfr. Part #:
NTS170N06S
Package:
TO-252
Product Description

Product Overview

The NTS170N06S is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. Designed for high efficiency and reliability, it features low RDS(ON) for reduced power loss and low gate charge for high-speed switching. Its high EAS rating ensures robustness in demanding applications. Typical use cases include DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, and printed circuit board control. It is also suitable for automotive electronics and Uninterruptible Power Supplies (UPS).

Product Attributes

  • Brand: Niuhang (NH)
  • Product Line Code: FF
  • Model ID: NTS170N06S
  • Package: TO-252
  • Certifications: RoHS Compliant
  • Weight: App. 0.321 Grams (0.01132 Ounce)
  • Date Code: YWW
  • Internal Code: LLWWF

Technical Specifications

Parameter Test Conditions Symbol Min. Typ. Max. Unit
PRODUCT SUMMARY
Drain-Source Voltage @Tj VDS 60 -- -- V
Continuous Drain Current @Ta ID 36 -- -- A
RDS(ON) Type @10V RDS(ON) -- 12.60 -- m
Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified)
Drain-Source Voltage VDS -- -- 60 V
Gate-Source Voltage VGS -- -- 20 V
Continuous Drain Current (Note 1) Ta= 25 ID -- -- 36 A
Continuous Drain Current (Note 1) Ta= 100 ID -- -- 29 A
Drain Current-Pulsed (Note 1) TJ< 175 IDM -- -- 144 A
Maximum Power Dissipation Ta= 25 PD -- -- 48 W
Maximum Power Dissipation Ta= 100 PD -- -- 24 W
Dissipation Derating Factor Above 25 DF -- -- 0.32 W/
Junction Temperature TJ -55 -- 175
Storage Temperature Range TSTD -55 -- 175
Avalanche Current, Single Pulse (Note 1) L= 0.5 mH IAS -- -- 21 A
Single Pulse Avalanche Energy (Note 1) L= 0.5 mH, VDD= 30 V EAS -- -- 110 mJ
Thermal Characteristics (Ta=25 Unless Otherwise Specified)
Thermal Resistance Junction To Ambient Still Air Environment With Ta =25C RJA -- 60.0 -- /W
Thermal Resistance Junction-Case Device Mounted On 1 in 2 FR-4 Board With 2oz RJC -- 3.1 -- /W
Electrical Characteristics (Ta=25 Unless Otherwise Specified)
Static off Characteristics
Drain-Source Breakdown Voltage VGS=0V, ID=250uA BV DSS 60 -- -- V
Bvdss Temperature Coefficient ID=250uA, Reference 25 BV DSS/T J -- 0.057 -- V/
Drain-Source Leakage Current VDS= 60 V, VGS=0V I DSS -- -- 1 uA
Gate-Body Leakage Current VGS= 20 V, VDS=0V I GSS -- -- 100 nA
Forward Transconductance ID= 18 A, VDS= 5 V gfs -- 21 -- S
Static on Characteristics
Gate Threshold Voltage VGS= VDS ID=250uA V GS(TH) 1.0 1.5 2.0 V
Drain-Source On Resistance ID= 18 A, VGS= 10 V R DS(ON) -- 12.60 17.00 m
Drain-Source On Resistance ID= 18 A, VGS= 4.5 V R DS(ON) -- 14.49 22.78 m
Dynamic Characteristics
Gate Resistance VGS=0V, VDS=0V, Freq.=1MHz R g -- 1.50 --
Input Capacitance VDS= 30 V C iss -- 2100.0 -- pF
Output Capacitance VGS= 0 V C oss -- 100.0 -- pF
Reverse Transfer Capacitance F= 1 MHZ C rss -- 95.0 -- pF
Switching Parameters (Test Circuit & Waveform See Fig.14)
Turn-On Delay Time VDS= 30 V t d(on) -- 10.0 -- ns
Turn-On Rise Time VGS= 10 V t r -- 7.6 -- ns
Turn-Off Delay Time RL= 1.2 t d(off) -- 55.0 -- ns
Turn-Off Rise Time RG= 10 t f -- 13.0 -- ns
Gate Charge Parameters (Test Circuit & Waveform See Fig.15)
Total Gate Charge VDS= 30 V Q g -- 46.0 -- nC
Gate-Source Charge VGS= 10 V Q gs -- 10.0 -- nC
Gate-Drain Charge ID= 18 A Q gd -- 6.5 -- nC
Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17)
Max. Diode Forward Current I S -- -- 36 A
Max. Pulsed Forward Current I SM -- -- 126 A
Diode Forward Voltage ID= 18 A, VGS=0V V SD -- 1.20 1.7 V
Reverse Recovery Time ID= 18 A, di/dt= 100 A/us t rr -- 20 -- ns
Reverse Recovery Charge VGS= 10 V, VDS= 30 V Q rr -- 20.0 -- uC
OUTLINE DRAWINGS TO-252 OUTLINE DIMENSIONS
Dimension Unit Min. Typ. Max. Unit Min. Typ. Max.
A mm 6.100 -- 7.100 Inches 0.240 -- 0.280
B mm 4.800 -- 5.800 Inches 0.189 -- 0.228
C mm 1.950 -- 2.550 Inches 0.077 -- 0.100
D mm 0.350 -- 0.750 Inches 0.014 -- 0.030
E mm 9.250 -- 10.750 Inches 0.364 -- 0.423
F mm 5.600 -- 6.600 Inches 0.220 -- 0.260
G mm 2.500 -- 3.100 Inches 0.098 -- 0.122
H mm 0.650 -- 1.050 Inches 0.026 -- 0.041
J mm 2.100 -- 2.500 Inches 0.083 -- 0.098
L mm 1.000 -- 1.400 Inches 0.039 -- 0.055
M mm 0.350 -- 0.750 Inches 0.014 -- 0.030
PACKING INFORMATION
Package Code Package Method Inner Box Size LWH(mm) Quantity (Pcs/Inner Box) Outer Carton Size LWH(mm) Quantity (Pcs/Carton)
TO-252 Tape Reel 34034050 5000 360x360x260 25000

2411011351_NH-NTS170N06S_C41784119.pdf

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