Low Vf Schottky Barrier Rectifiers NH MBR30L100CT 30 Amp 100 Volt TO220AB Package Semiconductor Device
Key Attributes
Model Number:
MBR30L100CT
Product Custom Attributes
Reverse Leakage Current (Ir):
100uA@100V
Non-Repetitive Peak Forward Surge Current:
220A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
770mV@15A
Current - Rectified:
30A
Mfr. Part #:
MBR30L100CT
Package:
TO-220AB
Product Description
Niuhang MBR30L100CT Low Vf Schottky Barrier Rectifiers
The Niuhang MBR30L100CT is a Low Vf Schottky Barrier Rectifier featuring NH's Low Vf Schottky Barrier Chip Technology, offering super low forward voltage drop for high efficiency and low power loss for high reliability. Its fast switching speed makes it suitable for various demanding applications.
Product Attributes
- Brand: Niuhang Electronic Specification Technology Co., Ltd
- Product Line Code: FF
- Model: MBR30L100CT
- Package: TO-220AB
- Certifications: RoHS-Compliant, UL-94 ClassV-0 Recognized, Pb-Free, HF Halogen-Free
Technical Specifications
| Parameter | Test Conditions | Symbol | Ratings | Unit |
| Low Vf Schottky Barrier Rectifiers | Voltage | 100 | Volts | |
| Current | 30 | Ampers | ||
| Maximum Repetitive Peak Reverse Voltage | VRRM | 100 | V | |
| Maximum RMS Voltage | VRMS | 70 | V | |
| Maximum DC Blocking Voltage | VDC | 100 | V | |
| Maximum Average Forward Rectified Current Per Diode | IF(AV) | 15 | A | |
| Maximum Average Forward Rectified Current Total device | IF(AV) | 30 | A | |
| Peak Forward Surge Current Per Diode | 8.3ms Single Half Sine-wave Superimposed On Rate Load | IFSM | 220 | A |
| Current Squared Time Per Diode | t< 8.3ms | I2t | 200.9 | A2sec |
| Instaneous Forward Voltage Per Diode | Ta=25, IF= 15.0 A | VF | 0.72 | V |
| Instaneous Forward Voltage Per Diode | Ta=100, IF= 15.0 A | VF | 0.66 | V |
| Instaneous Forward Voltage Per Diode | Ta=25, IF= 15.0 A | VF | 0.77 | V |
| Instaneous Forward Voltage Per Diode | Ta=100, IF= 15.0 A | VF | 0.73 | V |
| Maximum DC Reverse Current at Rated DC Blocking Voltage | Ta=25,VR=VRRM | IRRM | 25 | uA |
| Maximum DC Reverse Current at Rated DC Blocking Voltage | Ta=100,VR=VRRM*80% | IRRM | 2 | mA |
| Typical Junction Capacitance Per Diode | 4 V,1MHz | CJ | 850 | pF |
| Maximum Reverse Recovery Time | IF=0.5A, IR=1.0A, IRR=0.25A | Trr | 35 | nS |
| Operating Junction Temperature Range | TJ | -55 to 150 | ||
| Storage Temperature Range | TSTD | -55 to 150 | ||
| Thermal Resistance Junction To Ambient | Still Air Environment, With Steady-State, With Ta=25 | RJA | 62.5 | /W |
| Thermal Resistance Junction-Case | Device Mounted On 75mm x 45mm x 2.5mm Alu. Heat., With Steady-State, With Ta=25 | RJC | 2.0 | /W |
Typical Applications
- Switch Mode Power Supplies (SMPS)
- Fast Chargers
- LED Driver And Monitor Lighting
- Automotive Electronics And Charging Posts
2508201745_NH-MBR30L100CT_C7428072.pdf
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