Low Gate Charge N Channel MOSFET NH 2N7002K Suitable for Automotive and High Frequency Applications
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.7Ω@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.5pF
Number:
1 N-channel
Output Capacitance(Coss):
4pF
Input Capacitance(Ciss):
27pF
Pd - Power Dissipation:
3.33W
Gate Charge(Qg):
3.7nC@30V
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is an N-Channel Enhancement Mode Power MOSFET from Guangdong Niuhang Specification Electronic Technology Co., Ltd. It offers low RDS(ON) for high efficiency and low gate charge for high-speed switching. With high EAS for reliability, this MOSFET is suitable for applications such as DC/DC converters, synchronous rectification, high-frequency circuits, battery management systems (BMS), motor drives, printed circuit board control, automotive electronics, and UPS. It is 100% UIS and RG tested.
Product Attributes
- Brand: Guangdong Niuhang Specification Electronic Technology Co., Ltd
- Product Code: 2N7002K
- Type: N-Channel Enhancement Mode Power MOSFET
- Package: SOT-23
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Symbol | Min. | Typ. | Max. | Unit | |
|---|---|---|---|---|---|---|---|
| PRODUCT SUMMARY | |||||||
| Drain-Source Voltage | Min.@Tj | VDS | 60 | -- | -- | V | |
| Current | Min.@Ta | ID | 0.34 | -- | -- | A | |
| RDS(ON) Type | @10V | RDS(ON) | -- | 2.20 | -- | ||
| Absolute Maximum Ratings (Ta=25 Unless Otherwise Specified) | |||||||
| Drain-Source Voltage | VDS | -- | -- | 60 | V | ||
| Gate-Source Voltage | VGS | -- | -- | 20 | V | ||
| Continuous Drain Current | Ta= 25 (Note 1) | ID | -- | -- | 0.34 | A | |
| Continuous Drain Current | Ta= 100 (Note 1) | ID | -- | -- | 0.22 | A | |
| Drain Current-Pulsed | TJ< 150 (Note 1) | IDM | -- | -- | 1.36 | A | |
| Maximum Power Dissipation | Ta= 25 | PD | -- | -- | 8.33 | W | |
| Power Dissipation Derating Factor | Above 25 Ta= 100 | DF | -- | 0.07 | -- | W/ | |
| Junction Temperature | TJ | -55 | -- | 150 | |||
| Storage Temperature Range | TSTD | -55 | -- | 150 | |||
| Avalanche Current,Single Pulse | L= 0.5 mH (Note 1) | IAS | -- | -- | 7 | A | |
| Single Pulse Avalanche Energy | L= 0.5 mH,VDD= 30 V (Note 1) | EAS | -- | -- | 11 | mJ | |
| Thermal Characteristics (Ta=25 Unless Otherwise Specified) | |||||||
| Thermal Resistance Junction To Ambient | Still Air Environment With Ta =25C | RJA | -- | 300.0 | -- | /W | |
| Thermal Resistance Junction-Case | Device Mounted On 1 in FR-4 Board With 2oz | RJC | -- | 15.0 | -- | /W | |
| Electrical Characteristics (Ta=25 Unless Otherwise Specified) | |||||||
| Static off Characteristics | |||||||
| Drain-Source Breakdown Voltage | VGS=0V,ID=250uA | BV DSS | 60 | -- | -- | V | |
| Bvdss Temperature Coefficient | ID=250uA,Reference25 | BV DSS/T J | -- | 0.069 | -- | V/ | |
| Drain-Source Leakage Current | VDS= 60 V,VGS=0V | I DSS | -- | -- | 1 | uA | |
| Gate-Body Leakage Current | VGS= 20 V,VDS=0V | I GSS | -- | -- | 100 | nA | |
| Forward Transconductance | ID= 0 A,VDS= 5 V | gfs | -- | 5 | -- | S | |
| Static on Characteristics | |||||||
| Gate Threshold Voltage | VGS= VDS ID=250uA | V GS(TH) | 1.0 | 1.7 | 2.5 | V | |
| Drain-Source On Resistance | ID= 0 A,VGS= 10 V | R DS(ON) | -- | 2.20 | 5.00 | ||
| Drain-Source On Resistance | ID= 0 A,VGS= 4.5 V | R DS(ON) | -- | 2.53 | 6.70 | ||
| Dynamic Characteristics | |||||||
| Gate Resistance | VGS=0V,VDS=0V, Freq.=1MHz | R g | -- | 2.90 | -- | ||
| Input Capacitance | VDS= 30 V | C iss | -- | 27.0 | -- | pF | |
| Output Capacitance | VGS= 0 V | C oss | -- | 4.0 | -- | pF | |
| Reverse Transfer Capacitance | F= 1 MHZ | C rss | -- | 2.5 | -- | pF | |
| Switching Parameters (Test Circuit & Waveform See Fig.14) | |||||||
| Turn-On Delay Time | VDS= 30 V | t d(on) | -- | 4.3 | -- | ns | |
| Turn-On Rise Time | VGS= 10 V | t r | -- | 5.3 | -- | ns | |
| Turn-Off Delay Time | RL= 1.2 | t d(off) | -- | 15.0 | -- | ns | |
| Turn-Off Rise Time | RG= 10 | t f | -- | 8.2 | -- | ns | |
| Gate Charge Parameters (Test Circuit & Waveform See Fig.15) | |||||||
| Total Gate Charge | VDS= 30 V | Q g | -- | 3.7 | -- | nC | |
| Gate-Source Charge | VGS= 10 V | Q gs | -- | 1.0 | -- | nC | |
| Gate-Drain Charge | ID= 0 A | Q gd | -- | 2.6 | -- | nC | |
| Drain-Source Diode Characteristics And Maximum Ratings (Test Circuit & Waveform See Fig.17) | |||||||
| Max. Diode Forward Current | I S | -- | -- | 0.34 | A | ||
| Max. Pulsed Forward Current | I SM | -- | -- | 1.19 | A | ||
| Diode Forward Voltage | ID= 0 A,VGS=0V | V SD | -- | 1.00 | 1.4 | V | |
| Reverse Recovery Time | ID= 0 A,di/dt= 100 A/us | t rr | -- | 30.0 | -- | ns | |
| Reverse Recovery Charge | VGS= 10 V,VDS= 30 V | Q rr | -- | 30.0 | -- | nC | |
| Physical Dimensions | |||||||
| Weight | App. | 0.008 | -- | 0.00028 | grams (ounce) | ||
| SOT-23 Outline Dimensions | |||||||
| Dimension | Unit | Min. | Typ. | Max. | Min. | Typ. | Max. |
| A | mm | 2.800 | -- | 3.200 | 0.1102 | -- | 0.1260 |
| B | mm | 1.150 | -- | 1.450 | 0.0453 | -- | 0.0571 |
| C | mm | 2.250 | -- | 2.650 | 0.0886 | -- | 0.1043 |
| D | mm | 0.850 | -- | 1.150 | 0.0335 | -- | 0.0453 |
| E | mm | 0.900 | -- | 1.200 | 0.0354 | -- | 0.0472 |
| F | mm | 0.080 | -- | 0.180 | 0.0031 | -- | 0.0071 |
| J | mm | 0.300 | -- | 0.500 | 0.0118 | -- | 0.0197 |
| K | mm | 1.700 | -- | 2.100 | 0.0669 | -- | 0.0827 |
| Recommended Mounting Pad Dimensions | |||||||
| Dimension | Unit | Min. | Typ. | Max. | Min. | Typ. | Max. |
| A | mm | -- | 0.600 | -- | -- | 0.0236 | -- |
| B | mm | -- | 0.800 | -- | -- | 0.0315 | -- |
| C | mm | -- | 2.000 | -- | -- | 0.0787 | -- |
| D | mm | -- | 1.900 | -- | -- | 0.0748 | -- |
2411141613_NH-2N7002K_C41784083.pdf
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