SOT 23 Package P Channel Enhancement Mode Transistor NIKO SEM PM509BA Halogen Free Lead Free Device
Key Attributes
Model Number:
PM509BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@10V,2A
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
27pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
190pF@15V
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
4.8nC@10V
Mfr. Part #:
PM509BA
Package:
SOT-23
Product Description
Product Overview
The PM509BA is a P-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features a SOT-23(S) package and is Halogen-Free & Lead-Free, indicating compliance with environmental standards.
Product Attributes
- Brand: NIKO-SEM
- Package: SOT-23(S)
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limits | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | -30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TA = 25 °C | -2 | A |
| TA = 70 °C | -1.5 | A | ||
| Pulsed Drain Current | IDM | -8 | A | |
| Power Dissipation | PD | TA = 25 °C | 0.7 | W |
| TA = 70 °C | 0.4 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Ambient | RθJA | Device mounted on 1in² FR-4 board with 2oz. Copper | 177 | °C/W |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -30 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = -250µA | -1, Typ -1.7, Max -3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = -24V, VGS = 0V | -1 | µA |
| VDS = -20V, VGS = 0V, TJ = 55 °C | -10 | µA | ||
| On-State Drain Current | ID(ON) | VDS = -10V, VGS = -10V | -8 | A |
| Drain-Source On-State Resistance | RDS(ON) | VGS = -4.5V, ID = -1.5A | 134, Typ 180 | mΩ |
| VGS =-10V, ID = -2A | 98, Typ 120 | mΩ | ||
| Forward Transconductance | gfs | VDS = -5V, ID = -2A | 4.3 | S |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | Ciss | VGS = 0V, VDS = -15V, f = 1MHz | 190 | pF |
| Output Capacitance | Coss | 36 | pF | |
| Reverse Transfer Capacitance | Crss | 27 | pF | |
| Total Gate Charge | Qg | VDS = -15V , VGS =-10V, ID = -2A | 4.8 | nC |
| Gate-Source Charge | Qgs | 0.5 | nC | |
| Gate-Drain Charge | Qg | 1.3 | nC | |
| Turn-On Delay Time | td(on) | VDD = -15V, VGS = -10V, ID ≈ -2A, RG = 6Ω | 14 | nS |
| Rise Time | tr | 36 | nS | |
| Turn-Off Delay Time | td(off) | 42 | nS | |
| Fall Time | tf | 34 | nS | |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | -2 | A | |
| Forward Voltage | VSD | IF = -2A, VGS = 0V | -1.1 | V |
| Reverse Recovery Time | trr | IF = -2A, dlF/dt = 100A / µS | 15 | nS |
| Reverse Recovery Charge | Qrr | 8 | nC | |
2410121550_NIKO-SEM-PM509BA_C532983.pdf
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