NIKO-SEM PM514BA N Channel Enhancement Mode Transistor Featuring SOT23 Package Halogen Free Lead Free
Key Attributes
Model Number:
PM514BA
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
40mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
44pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
331pF@10V
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
5nC@4.5V
Mfr. Part #:
PM514BA
Package:
SOT-23
Product Description
Product Overview
The PM514BA is an N-Channel Enhancement Mode Field Effect Transistor designed for various electronic applications. It features a SOT-23(S) package, is Halogen-Free & Lead-Free, and offers reliable performance with its robust specifications.
Product Attributes
- Brand: NIKO-SEM
- Package: SOT-23(S)
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | TA = 25 °C | 3.3 | A | ||
| TA = 70 °C | 2.7 | A | ||||
| Pulsed Drain Current | IDM | 12 | A | |||
| Power Dissipation | PD | TA = 25 °C | 0.7 | W | ||
| TA = 70 °C | 0.4 | W | ||||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 | 150 | °C | ||
| THERMAL RESISTANCE RATINGS | ||||||
| Junction-to-Ambient | RθJA | The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. | 170 | °C/W | ||
| ELECTRICAL CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 20 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 0.5 | 0.7 | 1 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±8V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 16V, VGS = 0V | 1 | µA | ||
| VDS = 10V, VGS = 0V, TJ = 55 °C | 10 | µA | ||||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 1.8V, ID = 2.5A | 55 | 80 | mΩ | |
| VGS = 2.5V, ID = 2.8A | 36 | 50 | mΩ | |||
| VGS = 4.5V, ID = 3A | 29 | 40 | mΩ | |||
| Forward Transconductance | gfs | VDS = 5V, ID = 3A | 16 | S | ||
| DYNAMIC CHARACTERISTICS | ||||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 10V, f = 1MHz | 331 | pF | ||
| Output Capacitance | Coss | 56 | pF | |||
| Reverse Transfer Capacitance | Crss | 44 | pF | |||
| Total Gate Charge | Qg | VDS = 10V , VGS =4.5V, ID = 3A | 5 | nC | ||
| Gate-Source Charge | Qgs | 0.6 | nC | |||
| Gate-Drain Charge | Qg d | 1.7 | nC | |||
| Turn-On Delay Time | td(on) | VDD = 10V, ID ≈ 3A, VGEN = 4.5V, RG = 6Ω | 30 | nS | ||
| Rise Time | tr | 30 | nS | |||
| Turn-Off Delay Time | td(off) | 90 | nS | |||
| Fall Time | tf | 31 | nS | |||
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Continuous Current | IS | 0.7 | A | |||
| Forward Voltage | VSD | IF = 3A, VGS = 0V | 1 | V | ||
| Reverse Recovery Time | trr | IF = 3A, dlF/dt = 100A / µS | 10 | nS | ||
| Reverse Recovery Charge | Qrr | 2 | nC | |||
2410121447_NIKO-SEM-PM514BA_C532984.pdf
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