N Channel Power MOSFET PAKER SI2300 with Low On Resistance and RoHS Compliant Small Outline Package
Key Attributes
Model Number:
SI2300
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-50℃~+150℃
RDS(on):
32mΩ@2.5V,3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
64pF
Number:
-
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
620pF
Gate Charge(Qg):
7.1nC
Mfr. Part #:
SI2300
Package:
SOT-23
Product Description
Product Overview
The SI2300 is an N-Channel Enhancement Mode Power MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It features an advanced trench process technology and is housed in a small outline SOT-23 plastic package. This MOSFET is halogen-free and RoHS compliant, making it suitable for various electronic applications requiring efficient power management.
Product Attributes
- Brand: (Pakermicro)
- Origin: Shenzhen, China
- Package: SOT-23 Small Outline Plastic Package
- Certifications: UL:94-0, Halogen free, RoHS compliant
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| VDS | Drain-Source Breakdown Voltage | VGS=0VID=250A | -- | -- | 20 | V |
| VGS | Gate-Source Voltage | -- | -- | -- | 12 | V |
| TJ | Maximum Junction Temperature | -- | -- | -- | 150 | C |
| TSTG | Storage Temperature Range | -- | -50 | -- | 150 | C |
| IDM | Pulse Drain Current | Tc=25C | -- | -- | 18 | A |
| ID | Continuous Drain Current | Tc=25C | -- | -- | 4.5 | A |
| PD | Maximum Power Dissipation | Tc=25C | -- | -- | 1 | W |
| RJA | Thermal Resistance Junction-Ambient | (*1 in2 Pad of 2-oz Copper), Max. | -- | 125 | -- | C/W |
| IS | Diode Continuous Forward Current | Tc=25C | -- | -- | 4.5 | A |
| Electrical Characteristics | ||||||
| IDSS | Zero Gate Voltage Drain Current | VDS=20VVGS=0V | -- | -- | 1 | uA |
| IGSS | Gate-Body Leakage Current | VGS=12VVDS=0V | -- | -- | 100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS=VGSID=250A | 0.45 | 0.62 | 1 | V |
| RDS(on) | Drain-Source On-State Resistance | VGS=4.5VID=4.5A | -- | 0.45 | 0.62 | m |
| RDS(on) | Drain-Source On-State Resistance | VGS=2.5VID=3.0A | -- | 1.2 | -- | m |
| CISS | Input Capacitance | VDS=10VVGS=0V f=1MHz | -- | 620 | -- | pF |
| COSS | Output Capacitance | VDS=10VVGS=0V f=1MHz | -- | 114 | -- | pF |
| CRSS | Reverse Transfer Capacitance | VDS=10VVGS=0V f=1MHz | -- | 64 | -- | pF |
| Qg | Total Gate Charge | VDS=10VID=4.5A VGS=4.5V | -- | 13 | -- | nC |
| Qgs | Gate Source Charge | VDS=10VID=4.5A VGS=4.5V | -- | 1.9 | -- | nC |
| Qgd | Gate Drain Charge | VDS=10VID=4.5A VGS=4.5V | -- | 1.4 | -- | nC |
| td(on) | Turn-on Delay Time | VDD=10VRL=1.5 VGS=4.5VRG=10 | -- | 7.1 | -- | nS |
| tr | Turn-on Rise Time | -- | 11 | -- | nS | |
| td(off) | Turn-Off Delay Time | -- | 18 | -- | nS | |
| tf | Turn-Off Fall Time | -- | 13 | -- | nS | |
| VSD | Forward on voltage | Tj=25Is=4.5A | -- | -- | 1.2 | V |
2410122013_PAKER-SI2300_C5278895.pdf
Related Products
Digital transistor YANGJIE DTC124EUA featuring built in resistors and UL 94 V 0 rating for electronic
Product OverviewThe DTC124EUA is a digital transistor with built-in resistors, designed for easy configuration of inverter circuits without external input resistors. It features a surface mount package ideal for automatic insertion and meets UL-94 V-0 flammability rating. This NPN transistor is ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
