N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM PK618BA suitable for power management switching
Key Attributes
Model Number:
PK618BA
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
59A
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
1.75V
Reverse Transfer Capacitance (Crss@Vds):
154pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.33nF@15V
Pd - Power Dissipation:
13W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
PK618BA
Package:
DFN-8-EP(6.1x5.2)
Product Description
Product Overview
The PK618BA is a N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It offers high current capabilities and low on-resistance, making it suitable for power management and switching tasks. This device is Halogen-Free & Lead-Free.
Product Attributes
- Brand: NIKO-SEM
- Package: PDFN 5x6P
- Certifications: Halogen-Free & Lead-Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Limit | Unit |
|---|---|---|---|---|
| ABSOLUTE MAXIMUM RATINGS | ||||
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±20 | V | |
| Continuous Drain Current | ID | TC = 25 °C | 59 | A |
| TC = 100 °C | 37 | A | ||
| Pulsed Drain Current | IDM | 150 | A | |
| Continuous Drain Current | ID | TA = 25 °C | 15 | A |
| TA = 70 °C | 12 | A | ||
| Avalanche Current | IAS | 31 | A | |
| Avalanche Energy | EAS | L = 0.1mH | 48 | mJ |
| Power Dissipation | PD | TC = 25 °C | 34 | W |
| TC = 100 °C | 13 | W | ||
| Power Dissipation | PD | TA = 25 °C | 2.5 | W |
| TA = 70 °C | 1.6 | W | ||
| Operating Junction & Storage Temperature Range | Tj, Tstg | -55 to 150 | °C | |
| THERMAL RESISTANCE RATINGS | ||||
| Junction-to-Ambient | RθJA | 50 | °C / W | |
| Junction-to-Case | RθJC | 3.6 | °C / W | |
| ELECTRICAL CHARACTERISTICS | ||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 30 | V |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 1.5 - 1.75 - 2.35 | V |
| Gate-Body Leakage | IGSS | VDS = 0V, VGS = ±20V | ±100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | µA |
| VDS = 20V, VGS = 0V, TJ = 55 °C | 10 | µA | ||
| Drain-Source On-State Resistance | RDS(ON) | VGS = 4.5V, ID = 15A | 4.5 - 6.8 | mΩ |
| VGS = 10V, ID = 20A | 3.7 - 5.5 | mΩ | ||
| Forward Transconductance | gfs | VDS = 5V, ID = 20A | 60 | S |
| DYNAMIC CHARACTERISTICS | ||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 1330 | pF |
| Output Capacitance | Coss | 257 | pF | |
| Reverse Transfer Capacitance | Crss | 154 | pF | |
| Gate Resistance | Rg | VGS = 0V, VDS = 0V, f = 1MHz | 1.6 | Ω |
| Total Gate Charge | Qg | VDS = 15V , VGS = 10V, ID = 20A | 28 | nC |
| Gate-Source Charge | Qgs | VGS = 4.5V | 4 | nC |
| Gate-Drain Charge | Qgd | 7.1 | nC | |
| Turn-On Delay Time | td(on) | VDS = 15V , ID & 20A, VGS = 10V, RGEN =6Ω | 19 | nS |
| Rise Time | tr | 10 | nS | |
| Turn-Off Delay Time | td(off) | 40 | nS | |
| Fall Time | tf | 12 | nS | |
| SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||
| Continuous Current | IS | 59 | A | |
| Forward Voltage | VSD | IF = 20A, VGS = 0V | 1.2 | V |
| Reverse Recovery Time | trr | IF = 20A, dlF/dt = 100A / µS | 22 | nS |
| Reverse Recovery Charge | Qrr | 8 | nC | |
2411220221_NIKO-SEM-PK618BA_C532979.pdf
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